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MX29F004TQC-70 PDF预览

MX29F004TQC-70

更新时间: 2024-11-02 22:19:15
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
39页 869K
描述
4M-BIT [512KX8] CMOS FLASH MEMORY

MX29F004TQC-70 数据手册

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MX29F004T/B  
4M-BIT [512KX8] CMOS FLASH MEMORY  
FEATURES  
• 524,288 x 8 only  
- Suspends an erase operation to read data from,  
or program data to, another sector that is not being  
erased, then resumes the erase.  
• Status Reply  
• Single power supply operation  
- 5.0V only operation for read, erase and program  
operation  
• Fast access time: 70/90/120ns  
• Low power consumption  
- Data polling & Toggle bit for detection of program  
and erase cycle completion.  
- 30mA maximum active current(5MHz)  
- 1uA typical standby current  
• Chip protect/unprotect for 5V only system or 5V/  
12V system.  
• Command register architecture  
- Byte Programming (7us typical)  
- Sector Erase  
(Sector structure:16KB/8KB/8KB/32KB and 64KBx7)  
• Auto Erase (chip & sector) and Auto Program  
- Automatically erase any combination of sectors  
with Erase Suspend capability.  
- Automatically program and verify data at specified  
address  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
- 32-pin PLCC, TSOP or PDIP  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• 20 years data retention  
• Erasesuspend/EraseResume  
GENERAL DESCRIPTION  
The MX29F004T/B is a 4-mega bit Flash memory  
organized as 512K bytes of 8 bits. MXIC's Flash  
memoriesofferthemostcost-effectiveandreliableread/  
write non-volatile random access memory. The  
MX29F004T/B is packaged in 32-pin PLCC, TSOP,  
PDIP. It is designed to be reprogrammed and erased in  
system or in standard EPROM programmers.  
during erase and programming, while maintaining  
maximum EPROM compatibility.  
MXIC Flash technology reliably stores memory  
contents even after 100,000 erase and program  
cycles. The MXIC cell is designed to optimize the  
erase and programming mechanisms. In addition,  
the combination of advanced tunnel oxide  
processing and low internal electric fields for erase  
and program operations produces reliable cycling.  
The MX29F004T/B uses a 5.0V±10% VCC supply  
to perform the High Reliability Erase and auto  
Program/Erase algorithms.  
The standard MX29F004T/B offers access time as fast  
as 70ns, allowing operation of high-speed  
microprocessors without wait states. To eliminate bus  
contention,theMX29F004T/Bhasseparatechipenable  
(CE) and output enable (OE ) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F004T/Busesacommandregistertomanagethis  
functionality. The command register allows for 100%  
TTL level control inputs and fixed power supply levels  
The highest degree of latch-up protection is  
achieved with MXIC's proprietary non-epi process.  
Latch-up protection is proved for stresses up to  
100 milliamps on address and data pin from -1V to  
VCC + 1V.  
P/N:PM0554  
REV. 1.4, JUN. 12, 2001  
1

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