Datasheet > MX29F004BQC-70G

MX29F004BQC-70G

更新时间： 2024-11-03 15:45:47

品牌	Logo	应用领域
旺宏电子 - Macronix		内存集成电路
页数	文件大小	规格书
39页	587K
描述
Flash, 512KX8, 70ns, PQCC32, LEAD FREE, PLASTIC, MS-016, LCC-32

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MX29F004BQC-70G 数据手册

MX29F004T/B

4M-BIT[512KX8]CMOSFLASHMEMORY

FEATURES

• 524,288 x 8 only

• Erase suspend/Erase Resume

- Suspends an erase operation to read data from, or

program data to, another sector that is not being

erased, then resumes the erase.

• Single power supply operation

- 5.0V only operation for read, erase and program op-

eration

• Fast access time: 70/90/120ns

• Low power consumption

• Status Reply

- Data polling & Toggle bit for detection of program

and erase cycle completion.

- 30mA maximum active current (5MHz)

- 1uA typical standby current

• Chip protect/unprotect for 5V only system or 5V/12V

system.

• Command register architecture

- Byte Programming (7us typical)

- Sector Erase

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

(Sector structure:16KB/8KB/8KB/32KB and 64KBx7)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- 32-pin PLCC, TSOP or PDIP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Automatically program and verify data at specified

address

• 20 years data retention

GENERAL DESCRIPTION

The MX29F004T/B is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29F004T/B is

packaged in 32-pin PLCC, TSOP, PDIP. It is designed

to be reprogrammed and erased in system or in stan-

dard EPROM programmers.

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and programming mechanisms. In addition,

the combination of advanced tunnel oxide

processing and low internal electric fields for erase

and program operations produces reliable cycling.

The MX29F004T/B uses a 5.0V±10% VCC supply

to perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29F004T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F004T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F004T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to 100

milliamps on address and data pin from -1V to VCC

+ 1V.

P/N:PM0554

REV. 1.9, OCT. 19, 2004

12 3 4 5 6 7...39

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与MX29F004BQC-70G相关器件

型号	品牌	获取价格	描述	数据表
MX29F004BQC-90	Macronix	获取价格	Flash, 512KX8, 90ns, PQCC32, PLASTIC, MS-016, LCC-32
MX29F004BQC-90G	Macronix	获取价格	Flash, 512KX8, 90ns, PQCC32, LEAD FREE, PLASTIC, MS-016, LCC-32
MX29F004BQI-12	ETC	获取价格	EEPROM
MX29F004BQI-55	ETC	获取价格	EEPROM
MX29F004BQI-70	ETC	获取价格	EEPROM
MX29F004BQI-90	ETC	获取价格	EEPROM
MX29F004BRC-12	Macronix	获取价格	Flash, 512KX8, 120ns, PDSO32, 12 X 20 MM, PLASTIC, REVERSE, TSOP-32
MX29F004BRC-70	Macronix	获取价格	Flash, 512KX8, 70ns, PDSO32, 12 X 20 MM, PLASTIC, REVERSE, TSOP-32
MX29F004BTC-12	Macronix	获取价格	Flash, 512KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142, TSOP1-32
MX29F004BTC-55	Macronix	获取价格	Flash, 512KX8, 55ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142, TSOP1-32

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