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MWS11-GB11T PDF预览

MWS11-GB11T

更新时间: 2024-10-29 05:41:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 射频微波
页数 文件大小 规格书
5页 119K
描述
Wide Band Low Power Amplifier, 0MHz Min, 6000MHz Max, PLASTIC, SOT-23, 5 PIN

MWS11-GB11T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84特性阻抗:50 Ω
增益:10.2 dB最大输入功率 (CW):10 dBm
最大工作频率:6000 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND LOW POWER最大电压驻波比:2.5

MWS11-GB11T 数据手册

 浏览型号MWS11-GB11T的Datasheet PDF文件第2页浏览型号MWS11-GB11T的Datasheet PDF文件第3页浏览型号MWS11-GB11T的Datasheet PDF文件第4页浏览型号MWS11-GB11T的Datasheet PDF文件第5页 
C O N F I D E N T I A L  
MWS11-GB11  
InGaP HBT Gain Block  
A
M I C R O S E M I  
C O M P A N Y  
PREVIEW  
This general purpose amplifier is a low  
This RFIC amplifier is initially  
Advanced InGaP HBT  
cost, broadband RFIC manufactured with available in a high performance ceramic  
an InGaP/GaAs Heterojunction Bipolar micro-X package to handle P1dB output  
Transistor (HBT) process (MOCVD). power up to 19dBm (5V) and lower  
This RFIC amplifier was designed as an powers in an industry-standard SOT-23 5-  
easily cascadable 50 ohm gain block. The lead surface mount package. The same  
device is self-contained with 50 ohm input RFIC will be available later in an  
and output impedance. Applications in- advanced Microsemi Gigamite™ package  
clude IF and RF amplification in wireless/ with ceramic Micro-X performance but  
wired voice and data communication with the cost similar to the SOT-23 plastic  
products and broadband test equipment package.  
DC to 6GHz  
Single +5V Supply  
Small Signal Gain = 16dB  
P1dB = 19dBm (5V),  
f=1GHz  
SOT-23 5-Pin, Micro-X, &  
Gigamite Packages  
Mcrosemi  
.
Broadband Gain Blocks  
IF or RF buffer Amplifiers  
Driver Stage for Power  
Amps  
Final Power Amp for Low to  
Medium Power Applications  
Broadband Test Equipment  
operating up to 6 GHz.  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
4 5  
4 0  
3 5  
3 0  
2 5  
2 0  
1 5  
1 0  
5
f = 5 . 7 G H z  
V c c = 5 V  
N o m in a l C u r re n t  
2 0 m A  
0
-5  
-1 0  
-2 0  
-1 5  
-1 0  
-5  
0
5
1 0  
1 5  
P o u t  
P in (d B m )  
G a in  
C u rre n t  
SE SOT-23 5-Pin  
Plastic  
Ceramic Micro-X  
4-PIN  
Gigamite  
TJ (°C)  
0 to 70  
MWS11-GB11  
MWS11-GB11  
MWS11-GB11-X1  
Note: Available in Tape & Reel.  
Append the letter “T” to the part number. (i.e. MSW11-GB11-X1T)  
Copyright 2000  
Rev. 0.1b,2000-08-30  
Microsemi  
Page 1  
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121  

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