5秒后页面跳转
MURS110 PDF预览

MURS110

更新时间: 2024-09-21 05:51:11
品牌 Logo 应用领域
海湾 - GULFSEMI /
页数 文件大小 规格书
2页 130K
描述
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A

MURS110 技术参数

生命周期:Contact Manufacturer包装说明:PLASTIC, SMB, 2 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.16
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:100 V
最大反向恢复时间:0.025 µs表面贴装:YES
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

MURS110 数据手册

 浏览型号MURS110的Datasheet PDF文件第2页 
MURS105 THRU MURS160  
ULTRAFAST EFFICIENT  
GLASS PASSIVATED RECTIFIER  
VOLTAGE:50 TO 600V  
CURRENT: 1.0A  
SMBDO-214AA  
FEATURE  
Ultrafast Nanosecond Recovery Times  
150°C Operating Junction Temperature  
Low Forward Voltage  
Low Leakage Current  
High Temperature Glass Passivated Junction  
Mechanical Characteristics  
Case: JEDEC SMB/DO-214AA molded plastic body  
Terminals: Solder plated, solderable per MIL-STD-750, Method  
2026  
Polarity: Color band denotes cathode end  
Mark: M105B M110B M120B M130B M140B M160B  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
MURS  
105  
MURS  
110  
MURS  
120  
MURS  
130  
MURS  
140  
MURS  
160  
SYMBOL  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
50  
35  
50  
100  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
V
V
70  
Maximum DC blocking Voltage  
100  
Maximum Average Forward Rectified  
Current 3/8”lead length at TL =125°C  
Peak Forward Surge Current 8.3ms single  
half sine-wave superimposed on rated load  
Maximum Forward Voltage at rated Forward  
Current and 25°C  
If(av)  
Ifsm  
Vf  
1.0  
10  
A
A
V
40  
35  
0.875  
1.25  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =125°C  
Ir  
µA  
150  
Maximum Reverse Recovery Time (Note 1)  
Trr  
Cj  
25  
50  
nS  
pF  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 2)  
(Note 3)  
25  
13  
Rth(jl)  
Tstg, Tj  
°C /W  
°C  
Storage and Operating Temperature Range  
Note:  
-55 to +150  
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted  
Rev.A1  
www.gulfsemi.com  

与MURS110相关器件

型号 品牌 获取价格 描述 数据表
MURS110-LFR FRONTIER

获取价格

1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER
MURS110T3 MOTOROLA

获取价格

2A, 100V, SILICON, RECTIFIER DIODE, COMPACT, PLASTIC, CASE 403A-01, 2 PIN
MURS110T3 ONSEMI

获取价格

Surface Mount Ultrafast Power Rectifiers
MURS110T3G ONSEMI

获取价格

ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS
MURS115 FRONTIER

获取价格

1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER
MURS115 SUNMATE

获取价格

1.0A patch fast recovery diode 150V SMB series
MURS115T3 MOTOROLA

获取价格

2A, 150V, SILICON, RECTIFIER DIODE, COMPACT, PLASTIC, CASE 403A-01, 2 PIN
MURS115T3 ONSEMI

获取价格

Surface Mount Ultrafast Power Rectifiers
MURS115T3G ONSEMI

获取价格

ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS
MURS120 SYNSEMI

获取价格

SURFACE MOUNT ULTRA FAST RECTIFIERS