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MURS120

更新时间: 2024-11-09 14:53:15
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 5289K
描述
SMBG

MURS120 数据手册

 浏览型号MURS120的Datasheet PDF文件第2页浏览型号MURS120的Datasheet PDF文件第3页浏览型号MURS120的Datasheet PDF文件第4页 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CCOO..,, LLTTDD  
BG Plastic-Encapsulate Diodes  
Super Fast Recovery Rectifier Diodes  
MURS120 THRU MURS160  
Features  
SMBG  
IF(AV)  
1A  
VRRM  
200V-600V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
MURS1X0  
:
X From 2 to 6  
MUR  
Item  
Symbol Unit  
Test Conditions  
S120  
200  
S140  
S160  
600  
VRRM  
V
V
A
400  
280  
1.0  
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
VRMS  
140  
420  
60Hz Half-sine wave  
Resistance loadTa=100℃  
IF(AV)  
IFSM  
Average Forward Current  
60Hz Half-sine wave,  
1 cycleTa=25℃  
Surge(Non-repetitive)Forward  
Current  
A
30  
Operation Junction and  
Storage Temperature Range  
-55 ~ +150  
TJ,TSTG  
Electrical Characteristics (T=25 Unless otherwise specified  
MUR  
Test Condition  
Symbol  
Unit  
Item  
S120  
S160  
S140  
VFM  
IFM=1.0A  
Peak Forward Voltage  
1.25  
V
0.875  
IRRM1  
2
T =25  
5
a
V
Peak Reverse Current  
RM=V  
RRM  
IRRM2  
T =125  
a
50  
IF=0.5A,IR=1.0A  
Reverse recovery time  
trr  
25  
ns  
50  
Irr=0.25A  
Between junction and ambient  
60  
20  
R
R
Thermal  
Resistance(Typical)  
J-A  
J-L  
/W  
Between junction and lead  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper  
)
pad areas  
www.jscj-elec.com  
1
Rev. - 1.1  

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