Datasheet > MURS120-HE3/5BT

MURS120-HE3/5BT

更新时间： 2024-11-10 14:54:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	82K
描述
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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技术参数
数据手册

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MURS120-HE3/5BT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

MURS120-HE3/5BT 数据手册

MURS120

Vishay General Semiconductor

www.vishay.com

Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

DO-214AA (SMB)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

200 V

40 A

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

25 ns

0.71 V

175 °C

V_F

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

200

Maximum DC blocking voltage

200

T_L= 155 °C

Maximum average forward rectified current at (fig. 1)

T_L= 145 °C

1.0

2.0

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Revision: 07-Feb-12

Document Number: 88687

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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