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MURH805CT-BP PDF预览

MURH805CT-BP

更新时间: 2024-11-02 20:05:35
品牌 Logo 应用领域
美微科 - MCC 局域网功效二极管
页数 文件大小 规格书
3页 695K
描述
Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN

MURH805CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:65 A
元件数量:2相数:1
端子数量:3最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MURH805CT-BP 数据手册

 浏览型号MURH805CT-BP的Datasheet PDF文件第2页浏览型号MURH805CT-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MURH805CT  
THRU  
Micro Commercial Components  
MURH860CT  
Features  
·
·
·
Superfast switching time for hight efficiency  
Low reverse leakage current  
High surge capacity  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
8 Amp Super Fast  
Glass Passivated  
Rectifier  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
50 to 600 Volts  
Maximum Ratings  
TO-220AB  
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
C
B
·
S
F
Q
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
Maximum Maximum  
T
RMS  
DC  
Voltage  
Blocking  
Voltage  
A
U
1
2
3
MURH805CT MURH805CT  
MURH810CT MURH810CT  
MURH820CT MURH820CT  
MURH840CT MURH840CT  
MURH860CT MURH860CT  
35V  
70V  
140V  
280V  
420V  
50V  
100V  
200V  
400V  
600V  
H
K
V
L
J
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
R
G
Average Forward  
Current  
IF(AV)  
8.0A  
TC = 120°C  
N
Peak Forward Surge  
Current  
IFSM  
65A  
8.3ms, half sine  
PIN 1  
PIN 3  
PIN 2  
CASE  
Maximum Forward  
Voltage Drop Per  
DIMENSIONS  
INCHES  
MM  
VF  
IFM = 4 A per  
element;  
TA = 25°C*  
MIN  
14.22  
9.65  
MAX  
NOTE  
DIM  
MIN  
.560  
MAX  
.625  
Element  
2.2 V  
2.8 V  
A
B
C
15.88  
10.67  
4.82  
MURH805-840CT  
.380  
.140  
.420  
.190  
MURH860CT  
3.56  
Maximum DC  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
10 uA TJ = 25°C  
G
H
J
800 uA  
TJ = 100°C  
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
Maximum Reverse  
Trr  
IF=1.0A,  
Recovery Time  
MURH805-820CT  
MURH840-860CT  
di/dt=50A/uS  
N
.190  
.210  
4.83  
5.33  
35ns  
50ns  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
.045  
1.15  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
1 of 3  
Revision: 5  
2008/01/01  

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