Datasheet > MURH860CT_08

MURH860CT_08

更新时间： 2024-02-28 02:32:28

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	124K
描述
MEGAHERTZ Power Rectifier

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中文翻译

获取价格

数据手册

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MURH860CT_08 数据手册

MURH860CT

Preferred Device

MEGAHERTZt

Power Rectifier

These state-of-the-art are MEGAHERTZ power rectifiers are

designed for use in switching power supplies, inverters and as free

wheeling diodes.

http://onsemi.com

Features

• Ultrafast 35 Nanosecond Recovery Times

• 175°C Operating Junction Temperature

• Popular TO-220 Package

ULTRAFAST RECTIFIER

8.0 AMPERES, 600 VOLTS

• Epoxy Meets UL 94 V−0 @ 0.125 in

• High Temperature Glass Passivated Junction

• High Voltage Capability to 600 V

• Low Leakage Specified @ 150°C Case Temperature

• Current Derating @ Both Case and Ambient Temperatures

• Pb−Free Package is Available*

2, 4

Mechanical Characteristics:

• Case: Epoxy, Molded

TO−220AB

CASE 221A

PLASTIC

• Weight: 1.9 Grams (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MARKING DIAGRAM

MAXIMUM RATINGS (Per Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

600

RRM

AY WW

UH860G

AKA

RWM

Average Rectified Forward Current

4.0

8.0

F(AV)

(Rated V , T = 120°C) Total Device

Peak Repetitive Forward Current (Rated

V , Square Wave, 20 kHz, T = 120°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

100

= Assembly Location

= Year

= Work Week

FSM

UH860 = Device Code

Operating Junction and Storage

Temperature Range

T , T

−65 to +175

°C

stg

AKA

= Pb−Free Package

= Diode Polarity

THERMAL CHARACTERISTICS (Per Leg)

Rating

ORDERING INFORMATION

Symbol

Value

Unit

Max. Thermal Resistance, Junction−to−Case

3.0

°C/W

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

MURH860CT

TO−220

50 Units/Rail

MURH860CTG

TO−220

(Pb−Free)

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

June, 2008 − Rev. 4

MURH860CT/D

12 3 4

中文翻译

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与MURH860CT_08相关器件

型号	品牌	获取价格	描述	数据表
MURH860CT-B	MCC	获取价格	Rectifier Diode,
MURH860CT-BP	MCC	获取价格	暂无描述
MURH860CTG	ONSEMI	获取价格	ULTRAFAST RECTIFIER 8.0 AMPERES, 600 VOLTS
MURHB805CT	MCC	获取价格	8 Amp Super Fast Recovery Rectifier 50 to 600 Volts
MURHB805CT-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, D2PAK-3
MURHB805CT-T	MCC	获取价格	Rectifier Diode,
MURHB805CT-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, D2PAK-3
MURHB810CT	MCC	获取价格	8 Amp Super Fast Recovery Rectifier 50 to 600 Volts
MURHB810CT-B	MCC	获取价格	Rectifier Diode,
MURHB810CT-T	MCC	获取价格	Rectifier Diode,

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