MURH810CT-BP

更新时间： 2024-01-25 15:43:54

品牌	Logo	应用领域
美微科 - MCC		整流二极管局域网超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	151K
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中文翻译

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数据手册

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MURH810CT-BP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MURH805CT

THRU

MURH860CT

Features

Superfast switching time for hight efficiency

Low reverse leakage current

High surge capacity

8 Amp Super Fast

Glass Passivated

Rectifier

50 to 600 Volts

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

TO-220AB

Microsemi

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

MURH805CT MURH805CT

MURH810CT MURH810CT

MURH820CT MURH820CT

MURH840CT MURH840CT

MURH860CT MURH860CT

35V

70V

140V

280V

420V

50V

100V

200V

400V

600V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

8.0A

T_C= 120°C

Peak Forward Surge

Current

I_FSM

65A

8.3ms, half sine

Maximum Forward

Voltage Drop Per

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

V_F

I_FM= 4 A per

element;

T_A= 25°C*

ꢇ ꢇ ꢇ ꢇ

Element

2.2 V

2.8 V

INCHES

ꢂꢁꢄ

MURH805-840CT

ꢀꢁꢂ

ꢂꢈꢉ

ꢂꢁꢄ

15.11

9.65

ꢂꢈꢉ

15.75

10.29

4.82

ꢄꢆꢊꢃ

MURH860CT

.595

.380

.160

.025

.142

.620

.405

.190

Maximum DC

4.06

Reverse Current At

Rated DC Blocking

Voltage

I_R

10 uA T_J= 25°C

.035

.147

0.64

3.61

0.89

3.73

5.33

3.30

800 uA

T_J= 100°C

.190

.110

.210

.130

4.83

2.79

.018

.500

.045

.025

.562

.060

0.46

12.70

1.14

0.64

14.27

1.52

Maximum Reverse

Recovery Time

MURH805-820CT

MURH840-860CT

T_rr

I_F=1.0A,

di/dt=50A/uS

35ns

50ns

.100

.120

2.54

3.04

.080

.045

.235

------

.110

.055

.255

.050

2.04

1.14

5.97

-----

2.79

1.39

6.48

1.27

*Pulse test: Pulse width 300 msec, Duty cycle 2%

www.mccsemi.com

中文翻译

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