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MURF860-LF PDF预览

MURF860-LF

更新时间: 2024-11-02 20:57:03
品牌 Logo 应用领域
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页数 文件大小 规格书
4页 42K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ITO-220A, 2 PIN

MURF860-LF 数据手册

 浏览型号MURF860-LF的Datasheet PDF文件第2页浏览型号MURF860-LF的Datasheet PDF文件第3页浏览型号MURF860-LF的Datasheet PDF文件第4页 
®
MURF860  
8.0A GLASS PASSIVATED SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Planar Die Construction  
B
Superfast 28nS Recovery Time  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
Soft Recovery Characteristics  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
ITO-220A  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
3
4.16  
D
13.00  
0.30  
3.00 Ø  
6.30  
4.20  
2.50  
0.36  
2.60  
4.83  
13.80  
0.90  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220A, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.80  
I
3.30  
P
5.33  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
MURF860  
Unit  
VRRM  
VRWM  
VR  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
420  
8.0  
V
A
Average Rectified Output Current  
@TC = 105°C  
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half  
Sine-Wave Superimposed on Rated Load (JEDEC Method)  
IFSM  
VFM  
IRM  
125  
1.5  
A
V
Forward Voltage  
@IF = 8.0A  
Peak Reverse Current  
@TC = 25°C  
10  
500  
µA  
At Rated DC Blocking Voltage  
@TC = 100°C  
Reverse Recovery Time (Note 1)  
trr  
28  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Case  
RθJA  
RθJC  
73  
3.0  
°C/W  
RMS Isolation Voltage, t = 1 min  
VISO  
1500  
V
Operating and Storage Temperature Range  
TJ, TSTG  
-65 to +175  
°C  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: March, 2014  
www.wontop.com  
1

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