Datasheet > MURH10060R

MURH10060R

更新时间： 2024-09-26 01:06:07

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	650K
描述
Silicon Super Fast Recovery Diode

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中文翻译

获取价格

数据手册

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MURH10060R 数据手册

MURH10040 thru MURH10060R

V_RRM= 400 V - 600 V

I_F(AV)= 100 A

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 400 V to 600 V V_RRM

• Not ESD Sensitive

D-67 Package

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MURH10060(R)

Parameter

Symbol

MURH10040(R)

Unit

V_RRM

600

Repetitive peak reverse voltage

400

V_RMS

V_DC

T_j

420

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

280

600

400

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

MURH10060(R)

Parameter

Symbol

MURH10040(R)

Unit

T_C= 140 °C

t_p= 8.3 ms, half sine

I_FM= 100 A, T_j= 25 °C

T_j= 25 °C

I_F(AV)

I_FSM

V_F

100

2000

1.70

Average forward current (per pkg)

Peak forward surge current

100

2000

1.30

Maximum instantaneous forward

voltage

μA

Maximum reverse current at rated

DC blocking voltage

I_R

T_j= 125 °C

I_F=0.5 A, I_R=1.0 A,

I_RR= 0.25 A

T_rr

110

Maximum reverse recovery time

Thermal characteristics

Maximum thermal resistance,

junction - case

R_ΘJC

0.45

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/murh10040.pdf

12 3

中文翻译

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