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MURF880G PDF预览

MURF880G

更新时间: 2024-09-25 12:56:47
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 549K
描述
8.0 Amperes,800 Volts Insulated Package Ultra Fast Recovery Rectifiers

MURF880G 数据手册

 浏览型号MURF880G的Datasheet PDF文件第2页浏览型号MURF880G的Datasheet PDF文件第3页 
MURF880G  
®
MURF880G  
Pb Free Plating Product  
8.0 Amperes,800 Volts Insulated Package Ultra Fast Recovery Rectifiers  
ITO-220AC/TO-220F-2L  
Unit: mm  
Features  
‹ Epitaxial wafer with good soft recovery characteristics  
‹ Fast recovery time for hight efficiency  
‹ Low reverse leakage current  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.167(3.73)  
.122(3.10)  
.118(3.00)  
.079(2.00)  
‹ High surge capacity  
Mechanical Data  
‹ Case: Fully Plastic Isolated TO-220F-2L FullPak  
‹ Terminals: Lead solderable per MIL-STD-202, Method 208  
‹ Polarity: As marked  
‹ Standard packaging: Any  
‹ Weight: 0.08 ounces, 1.9 gram approximately  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
.1(2.54)  
.1(2.54)  
TO-220F-2L  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
MURF880G  
UNIT  
Marking code on thedevice body  
Repetitive peak reverse voltage  
Reverse voltage, total rms value  
Forward current  
MURF880G  
VRRM  
VR(RMS)  
IF(AV)  
800  
560  
8
V
V
A
Surge peak forward current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
100  
A
Junction temperature  
Storage temperature  
TJ  
-55 to +175  
-55 to +175  
°C  
°C  
TSTG  
Page 1/3  
Rev.08C  
© 2006 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com/  

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