RoHS
MUR1010FCT THRU MUR1060FCT
COMPLIANT
Ultra-Fast Recovery Rectifier Diodes
超快恢复整流二极管
■特征 Features
■外形尺寸和印记 Outline Dimensions and Mark
●
●
●
●
Io
10.0A
ITO-220AB
VRRM
100V~600V
.201(5.1)
MAX
.150(3.8)
.421(10.7)
MAX
玻璃钝化芯片 Glass passivated chip
耐正向浪涌电流能力高
.102(2.6)
DIA
.140(3.56)
MAX
.128(3.25)
.085(2.15)
High surge forward current capability
.626(15.9)
.567(14.4)
.177(4.5)
MAX
PIN1
2
3
.126(3.2)
.08(2.1)
.071(1.8)
MAX
.035(0.9)
MAX
.116(2.95)
.071(1.80)
.559(14.2)
.504(12.7)
■用途 Applications
● 快速整流用
.031(0.80)
MAX
.116(2.95)
.071(1.80)
High speed switching
PIN1
PIN2
PIN3
CASE
■
Dimensions in inches and (millimeters)
极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
MUR-FCT
1010 1015 1020 1040 1060
参数名称
Item
符号 单位
Symbol Unit
条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse Voltage
VRRM
V
A
A
100
150
200
400
600
正弦半波60Hz,电阻负载,Tc(Fig.1)
60HZ Half-sine wave, Resistance load,
Tc(Fig.1)
平均整流输出电流
Average Rectified Output Current
Io
10
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
IFSM
55
正向浪涌电流的平方对电流浪涌持续
时间的积分值
Current Squared Time
1ms≤t<8.3ms T =25℃,单个二
j
I2t
A2s
极管
12
1ms≤t<8.3ms T =25℃,Rating of
j
per diode
贮存温度
Storage Temperature
Tstg
Tj
-55 ~ +150
-55 ~ +150
℃
℃
结温
Junction Temperature
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
MUR-FCT
参数名称
Item
符号
Symbol
单位
Unit
测试条件
Test Condition
1010 1015 1020 1040 1060
I FM =5.0A
正向峰值电压
Peak Forward Voltage
VFM
V
0.975
1.30
1.5
T =25℃
IRRM1
IRRM2
10
反向峰值电流
Peak Reverse Current
a
μA
VRM =VRRM
T =125℃
a
500
反向恢复时间
Reverse Recovery Time
Trr
IF=0.5A IRM=1A IRR=0.25A
35
50
ns
热阻
结和壳之间
Between junction and case
R
θJ-C
℃/W
2.0
Thermal Resistance
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B100
Rev.1.3, 29-Nov-14