Datasheet > MURF1660CTS

MURF1660CTS

更新时间： 2024-11-19 01:14:07

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	373K
描述
16.0 Ampere Insulated Series Connection Ultra Fast Recovery Rectifiers

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中文翻译

获取价格

数据手册

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MURF1660CTS 数据手册

MURF1620CTS thru MURF1660CTS

MURF1620CTS/MURF1640CTS/MURF1660CTS

Pb Free Plating Product

16.0 Ampere Insulated Series Connection Ultra Fast Recovery Rectifiers

ITO-220AB

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

.189(4.8)

.406(10.3)

.165(4.2)

.381(9.7)

.134(3.4)

.130(3.3)

.118(3.0)

.114(2.9)

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTA"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25^o

ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MURF1620CTS MURF1640CTS MURF1660CTS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

16.0

IF(AV)

(Total Device 2x8A=16A)

Current T

=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

FSM

175

150

Maximum Instantaneous Forward Voltage

0.98

1.3

1.7

(Per Diode/Per Leg)

@ 8.0 A

Maximum DC Reverse Current @T

At Rated DC Blocking Voltage @T

=25^oC

5.0

100

μA

=125^oC

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

2.0

℃

Operating Junction and Storage

Temperature Range

-55 to + 150

℃

T , TSTG

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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与MURF1660CTS相关器件

型号	品牌	获取价格	描述	数据表
MURF1660D	SAMTEC	获取价格	16.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers
MURF1660DR	SAMTEC	获取价格	16.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers
MURF1660DR	THINKISEMI	获取价格	16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier
MURF1660E	SAMTEC	获取价格	16.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF1660GD	SAMTEC	获取价格	16.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF1660N	SAMTEC	获取价格	16.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
MURF20005	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF20005R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF20010	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF20010R	GENESIC	获取价格	Silicon Super Fast Recovery Diode

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