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MURF2010CT PDF预览

MURF2010CT

更新时间: 2024-11-19 01:08:59
品牌 Logo 应用领域
迪一电子 - DYELEC /
页数 文件大小 规格书
3页 946K
描述
High surge capability

MURF2010CT 数据手册

 浏览型号MURF2010CT的Datasheet PDF文件第2页浏览型号MURF2010CT的Datasheet PDF文件第3页 
MURF2010CT~MURF2060CT  
VOLTAGE  
CURRENT  
100 to 600 Volts  
ULTRAFAST RECOVERY RECTIFIERS  
20 Amperes  
FEATURES  
ITO-220AB  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0.  
Flame Retardant Epoxy Molding Compound.  
Low power loss, high efficiency.  
Low forward voltage, high current capability.  
• High surge capability  
• Ultra fast recovery time,high voltage.  
Lead free in comply with EU RoHS.  
MECHANICAL DATA  
• Case: ITO-220AB molded plastic  
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
MAXIMUMRATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MURF  
2 04 0 CT 2 05 0 CT  
MURF  
MURF  
2 06 0 CT  
MURF  
2 0 3 0 CT  
MURF  
2010 CT  
MURF  
2 02 0 CT  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
35 0  
500  
600  
420  
600  
Maximum RMS Voltage  
VRMS  
VDC  
IF(AV)  
IFSM  
VF  
V
V
A
A
V
Maximum D C Blocking Voltage  
100  
Maximum Average Fo rward C urrent at TC = 1 00O  
C
20  
Peak Fo rward S urge C urrent : 8.3ms si ngle half si ne-wave  
superimposed on rated load (JEDEC method)  
90  
Maxi mum F orward Vo ltage at 10A  
1
1.7  
1.3  
Maximum DC Reverse Current at Rated DC Blocking  
Voltage  
TJ=25O  
TJ=125O  
C
C
10  
500  
IR  
μA  
Typical Junction C apacitance (Note 1)  
Maximum Reverse Recovery Time (Note 2 )  
Typical Thermal Resistance (Note 3)  
Operating Junction and S torage Temperature Range  
NOTES:  
CJ  
trr  
200  
35  
3
pF  
ns  
OC /  
W
RθJC  
TJ,TSTG  
-55 to +150  
OC  
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.  
3. Thermal resistance from Junction to case.  
PAGE . 1  
May.2015-REV.00  
www.dyelec.com  

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