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MURF2020CTR PDF预览

MURF2020CTR

更新时间: 2024-01-11 15:50:30
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 610K
描述
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes

MURF2020CTR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向恢复时间:35 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MURF2020CTR 数据手册

 浏览型号MURF2020CTR的Datasheet PDF文件第2页 
MURF2020CTR thru MURF2060CTR  
®
MURF2020CTR thru MURF2060CTR  
Pb Free Plating Product  
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes  
Unit : inch (mm)  
ITO-220AB  
Features  
.189(4.8)  
.406(10.3)  
Fast switching for high efficiency  
.165(4.2)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters/Solar Inverters  
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
(2.55)  
Case: Insulated/Isolated ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
Polarity: As marked on diode body  
Mounting position: Any  
method 208  
Case  
Case  
Case  
Doubler  
Negative  
Common Anode  
Suffix "CTR"  
Positive  
Tandem Polarity  
Suffix "CTD"  
Weight: 2.2 gram approximately  
Common Cathode  
Suffix "CT"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MURF2020CT MURF2040CT MURF2060CT  
MURF2020CTR MURF2040CTR MURF2060CTR  
MURF2020CTD MURF2040CTD MURF2060CTD  
UNIT  
SYMBOL  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=125oC  
20.0  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
200  
175  
Maximum Instantaneous Forward Voltage  
@ 10.0 A  
VF  
IR  
0.98  
1.3  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
10.0  
250  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35  
pF  
oC  
120  
70  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions I  
F
= 0.5A, I  
R
= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04/2014  
© 2006 Thinki Semiconductor Co.,Ltd.  

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