Datasheet > MURF2040CTR

MURF2040CTR

更新时间： 2024-02-02 21:01:35

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	610K
描述
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes

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中文翻译

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数据手册

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MURF2040CTR 数据手册

MURF2020CTR thru MURF2060CTR

Pb Free Plating Product

20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes

Unit : inch (mm)

ITO-220AB

Features

.189(4.8)

.406(10.3)

ꢀ

Fast switching for high efficiency

.165(4.2)

.381(9.7)

.134(3.4)

.118(3.0)

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

.130(3.3)

.114(2.9)

Application

Automotive Inverters/Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Car Audio Amplifiers and Sound Device Systems

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: Insulated/Isolated ITO-220AB

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

Polarity: As marked on diode body

Mounting position: Any

method 208

Case

Doubler

Negative

Common Anode

Suffix "CTR"

Positive

Tandem Polarity

Suffix "CTD"

Weight: 2.2 gram approximately

Common Cathode

Suffix "CT"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MURF2020CT MURF2040CT MURF2060CT

MURF2020CTR MURF2040CTR MURF2060CTR

MURF2020CTD MURF2040CTD MURF2060CTD

UNIT

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current TC=125^oC

20.0

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

200

175

Maximum Instantaneous Forward Voltage

@ 10.0 A

0.98

1.3

1.7

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

10.0

250

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Trr

^oC

120

Operating Junction and Storage

Temperature Range

-55 to +150

, TSTG

NOTES : (1) Reverse recovery test conditions I

= 0.5A, I

= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Page 1/2

http://www.thinkisemi.com/

Rev.04/2014

中文翻译

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与MURF2040CTR相关器件

型号	品牌	获取价格	描述	数据表
MURF2040D	MICROSEMI	获取价格	20.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers
MURF2040DR	SAMTEC	获取价格	20.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers
MURF2040GD	SAMTEC	获取价格	20.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF2040N	SAMTEC	获取价格	20.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
MURF2050CT	SENO	获取价格	20.0A GLASS PASSIVATED SUPER FAST RECTIFIER
MURF2050CT	DYELEC	获取价格	High surge capability
MURF2050CT??	MDD	获取价格	ITO-220AB
MURF2060	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF2060	KISEMICONDUCTOR	获取价格	GLASS PASSIVATED SUPER FAST RECTIFIER
MURF2060CT	DIOTEC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

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