Datasheet > MURF2020

MURF2020

更新时间： 2024-01-25 00:40:55

品牌	Logo	应用领域
DIOTECH		二极管局域网超快速恢复二极管
页数	文件大小	规格书
2页	965K
描述
SUPER FAST RECOVERY SILICON RECTIFIER

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中文翻译

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数据手册

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MURF2020 数据手册

MURF2005 THRU MURF2060

SUPER FAST RECOVERY SILICON RECTIFIER

Reverse Voltage - 50 to 600 Volts

Forward Current - 20.0 Ampere

FEATURES

ITO-220AC

Glass Passivated Die Construction

4.5± 0.2

+0.2

-0.1

10.2± 0.2

3.1

Super-Fast Switching

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

4.0± 0.3

1.4± 0.1

0.6± 0.1

MECHANICAL DATA

2.6± 0.2

Case: ITO-220AC, Full Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.6± 0.1

5.0± 0.1

Polarity: See Diagram

Weight: 2.24 grams (approx.)

Mounting Position: Any

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Dimensions in millimeters

PIN 1 +

PIN 3 -

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

MURF

2020

MURF

2005

MURF

2010

MURF

2015

MURF

2030

MURF

2040

MURF

2060

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

150

105

200

300

210

400

600

R(RMS)

RMS Reverse Voltage

140

280

420

Average Rectified Output Current

20.0

@T_C= 100°C

Non-Repetitive Peak Forward Surge

Current 8.3ms Single half sine-wave

superimposed on rated load (JEDEC Method)

200

FSM

Forward Voltage

@I_F= 20.0A

V^FM

0.95

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 125°C

@T_A= 25°C

400

µA

Reverse Recovery Time (Note 1)

170

°C

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

150

T^j, T^STG

-65 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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