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MURF1660CT PDF预览

MURF1660CT

更新时间: 2024-09-30 04:13:59
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 112K
描述
ULTRAFAST RECTIFIER 16 AMPERES, 600 VOLTS

MURF1660CT 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.42Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:ULTRA FAST RECOVERY POWER
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.5 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.06 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

MURF1660CT 数据手册

 浏览型号MURF1660CT的Datasheet PDF文件第2页浏览型号MURF1660CT的Datasheet PDF文件第3页浏览型号MURF1660CT的Datasheet PDF文件第4页 
MURF1660CT  
Preferred Device  
SWITCHMODEt  
Power Rectifier  
These stateoftheart devices are designed for use in switching  
power supplies, inverters and as free wheeling diodes.  
Features  
http://onsemi.com  
Ultrafast 60 Nanosecond Recovery Times  
150°C Operating Junction Temperature  
Epoxy Meets UL 94 V0 @ 0.125 in  
ULTRAFAST RECTIFIER  
16 AMPERES, 600 VOLTS  
High Temperature Glass Passivated Junction  
Low Leakage Specified @ 150°C Case Temperature  
Current Derating @ Both Case and Ambient Temperatures  
Electrically Isolated. No Isolation Hardware Required.  
UL Recognized File #E69369 (Note 1)  
1
2
3
MARKING  
DIAGRAM  
PbFree Package is Available*  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.9 Grams (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
AYWW  
U1660G  
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds  
A K A  
ISOLATED TO220  
CASE 221D  
STYLE 3  
MAXIMUM RATINGS (Per Leg)  
1
Rating  
Symbol  
Value  
Unit  
2
3
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
600  
V
RRM  
RWM  
V
I
V
R
Average Rectified Forward Current  
A
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
F(AV)  
Total Device, (Rated V ), T = 150°C  
R
C
Per Diode  
Per Device  
8
16  
U1660 = Device Code  
G
AKA  
= PbFree Package  
= Diode Polarity  
Peak Repetitive Forward Current  
I
16  
A
A
FM  
(Rated V , Square Wave, 20 kHz),  
R
T
C
= 150°C  
Nonrepetitive Peak Surge Current  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
100  
FSM  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Operating Junction and Storage Temperature T , T  
65 to +150 °C  
J
stg  
MURF1660CT  
TO220  
50 Units/Rail  
50 Units/Rail  
RMS Isolation Voltage  
V
iso1  
V
MURF1660CTG  
TO220  
(PbFree)  
(t = 1 second, R.H. 30%, T = 25°C)  
A
(Note 2) Per Figure 3  
Per Figure 4 (Note 1)  
Per Figure 5  
4500  
3500  
1500  
V
iso2  
V
iso3  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. UL Recognized mounting method is per Figure 4  
2. Proper strike and creepage distance must be provided.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 Rev. 4  
MURF1660CT/D  
 

MURF1660CT 替代型号

型号 品牌 替代类型 描述 数据表
MUR1660CTG ONSEMI

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ULTRAFAST RECTIFIERS 8.0 AMPERES, 100−600 VOLTS
MURF1660CTG ONSEMI

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ULTRAFAST RECTIFIER 16 AMPERES, 600 VOLTS

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