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MURD320S-T3 PDF预览

MURD320S-T3

更新时间： 2024-09-26 15:45:11
品牌 Logo 应用领域
WTE 功效瞄准线二极管
页数 文件大小 规格书
4页 42K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, TO-252, DPAK-3/2

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MURD320S-T3 数据手册

 浏览型号MURD320S-T3的Datasheet PDF文件第2页浏览型号MURD320S-T3的Datasheet PDF文件第3页浏览型号MURD320S-T3的Datasheet PDF文件第4页 
®
MURD320/S – MURD360/S  
3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
A
B
C
J
Ideally Suited for Automatic Assembly  
Low Profile Package  
High Surge Current Capability  
Low Power Loss, High Efficiency  
Super-Fast Recovery Time  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
D
E
PIN 1  
2
3
K
G
H
L
P
P
DPAK/TO-252  
Min  
Mechanical Data  
Dim  
A
B
C
D
E
Max  
6.65  
5.55  
2.40  
1.25  
6.08  
3.00  
0.90  
0.55  
1.25  
0.55  
6.05  
Case: DPAK/TO-252, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
5.05  
PIN 1  
PIN 3  
2.25  
Case, PIN 2  
(MURD320 Series)  
1.05  
Polarity: See Diagram  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
5.48  
G
H
J
2.55  
0.55  
PIN 3  
Case, PIN 2  
(MURD320S Series)  
0.49  
K
L
0.95  
0.49  
P
2.30 Typical  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
MURD320/S MURD330/S MURD340/S MURD360/S Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
3.0  
75  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
0.95  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
45  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Lead (Note 3)  
RθJA  
RθJC  
49  
2.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on PCB with 700mm2 copper pads.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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