Datasheet > MURD330-T3

MURD330-T3

更新时间： 2024-11-01 14:54:03

品牌	Logo	应用领域
WTE		功效瞄准线二极管
页数	文件大小	规格书
4页	42K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, TO-252, DPAK-3/2

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MURD330-T3 数据手册

MURD320/S – MURD360/S

3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Ideally Suited for Automatic Assembly

Low Profile Package

High Surge Current Capability

Low Power Loss, High Efficiency

Super-Fast Recovery Time

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

PIN 1

DPAK/TO-252

Min

Mechanical Data

Dim

Max

6.65

5.55

2.40

1.25

6.08

3.00

0.90

0.55

1.25

0.55

6.05



Case: DPAK/TO-252, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

5.05

PIN 1

PIN 3

2.25

Case, PIN 2

(MURD320 Series)

1.05



Polarity: See Diagram

Weight: 0.3 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

5.48

2.55

0.55

PIN 3

Case, PIN 2

(MURD320S Series)

0.49

0.95

0.49

2.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

MURD320/S MURD330/S MURD340/S MURD360/S Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

3.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 3.0A

VFM

IRM

0.95

1.25

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

500

µA

Reverse Recovery Time (Note 1)

t_rr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Lead (Note 3)

RθJA

RθJC

2.0

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on PCB with 700mm²copper pads.

Revision: September, 2012

www.wontop.com

12 3 4

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