Datasheet > MURB3040CTR

MURB3040CTR

更新时间： 2024-11-18 01:10:15

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	799K
描述
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

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中文翻译

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数据手册

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MURB3040CTR 数据手册

MURB3020CTR thru MURB3060CTR

MURB3020CTR/MURB3030CTR/MURB3040CTR/MURB3060CTR

Pb Free Plating Product

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Unit : inch (mm)

D2PAK/TO-263

Latest GPP EPI P/G Technology

Good Soft Recovery Characteristics

Ideally Suited for Automatic Assembly

Low Forward Voltage

Features

High Surge Current Capability

Low Leakage Current

Freewheeling, Snubber, Clamp

Inversion Welder

PFC

Applications

Plating Power Supply

Ultrasonic Cleaner and Welder

Converter & Chopper

Case

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Positive

UPS/LED SMPS/HID

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

MURB3020CTR

MURB3030CTR MURB3040CTR MURB3060CTR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 110°C

Total Device

Per Diode

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

200

Forward Voltage per diode

@I_F= 15A

VFM

IRM

1.05

1.25

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

500

µA

Reverse Recovery Time (Note 1)

trr

Typical Junction Capacitance (Note 2)

175

145

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

R^θJA

RθJC

1.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

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