MURB820-1

更新时间： 2024-01-04 23:25:47

品牌	Logo	应用领域
威世 - VISHAY		二极管超快恢复二极管快速恢复二极管
页数	文件大小	规格书
7页	117K
描述
Ultrafast Rectifier, 8 A FRED PtTM

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技术参数
数据手册

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MURB820-1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.49
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.895 V
最大非重复峰值正向电流：	100 A	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	8 A
最大重复峰值反向电压：	200 V	最大反向恢复时间：	0.035 µs
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

MURB820-1 数据手册

MURB820/MURB820-1

Vishay High Power Products

Ultrafast Rectifier,

8 A FRED Pt^TM

FEATURES

MURB820-1

• Ultrafast recovery time

MURB820

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Designed and qualified for industrial level

Base

cathode

DESCRIPTION/APPLICATIONS

MUR.. series are the state of the art ultrafast recovery

rectifiers specifically designed with optimized performance of

forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time control,

guarantee the best overall performance, ruggedness and

reliability characteristics.

These devices are intended for use in the output rectification

stage of SMPS, UPS, dc-to-dc converters as well as

freewheeling diode in low voltage inverters and chopper

motor drives.

N/C

Anode

D²PAK

TO-262

PRODUCT SUMMARY

t_rr

I_F(AV)

V_R

25 ns

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

8 A

200 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

I_F(AV)

TEST CONDITIONS

MAX.

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Peak repetitive forward current

Operating junction and storage temperatures

200

Total device, rated V_R, T_C= 150 °C

Rated V_R, square wave, 20 kHz, T_C= 150 °C

100

I_FSM

I_FM

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 µA

I_F= 8 A

200

0.975

Forward voltage

V_F

I_R

I_F= 8 A, T_J= 150 °C

0.895

V_R= V_Rrated

Reverse leakage current

µA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

250

Junction capacitance

Series inductance

C_T

L_S

8.0

Measured lead to lead 5 mm from package body

Document Number: 93123

Revision: 24-Jun-08

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

12 3 4 5 6 7

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