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MURB820TRL

更新时间: 2024-11-30 05:51:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
7页 117K
描述
Ultrafast Rectifier, 8 A FRED PtTM

MURB820TRL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.32
其他特性:FREE WHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT应用:ULTRA FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.895 VJESD-30 代码:R-PSSO-G2
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):225认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MURB820TRL 数据手册

 浏览型号MURB820TRL的Datasheet PDF文件第2页浏览型号MURB820TRL的Datasheet PDF文件第3页浏览型号MURB820TRL的Datasheet PDF文件第4页浏览型号MURB820TRL的Datasheet PDF文件第5页浏览型号MURB820TRL的Datasheet PDF文件第6页浏览型号MURB820TRL的Datasheet PDF文件第7页 
MURB820/MURB820-1  
Vishay High Power Products  
Ultrafast Rectifier,  
8 A FRED PtTM  
FEATURES  
MURB820-1  
• Ultrafast recovery time  
MURB820  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Designed and qualified for industrial level  
Base  
cathode  
2
DESCRIPTION/APPLICATIONS  
2
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time control,  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
3
1
N/C  
3
1
N/C  
Anode  
Anode  
D2PAK  
TO-262  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
25 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
8 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
200  
V
Total device, rated VR, TC = 150 °C  
Rated VR, square wave, 20 kHz, TC = 150 °C  
8
100  
IFSM  
A
IFM  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
200  
-
-
V
-
-
-
-
-
-
-
-
0.975  
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
0.895  
VR = VR rated  
-
5
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
250  
Junction capacitance  
Series inductance  
CT  
LS  
25  
8.0  
-
-
pF  
nH  
Measured lead to lead 5 mm from package body  
Document Number: 93123  
Revision: 24-Jun-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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