Datasheet > MURC105GB

MURC105GB

更新时间： 2024-11-19 04:30:19

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
5页	310K
描述
50V, SILICON, SIGNAL DIODE, DIE-1

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MURC105GB 数据手册

MURC105-MURC160

SENSITRON

SEMICONDUCTOR

Technical Data

Data Sheet 4853, Rev. B

MURC105-MURC160

Ultrafast Silicon Die

Applications:

 Switching Power Supply  General Purpose  Free-Wheeling Diodes  Polarity Protection Diode

Features:



Glass-Passivated



Epitaxial Construction.

Low Reverse Leakage Current

High Surge Current Capability

Low Forward Voltage Drop

Fast Reverse-Recovery Behavior

Maximum Ratings:

Characteristics

Symbol

MURC

105

MURC

110

MURC

115

MURC MURC

MURC

160

Unit

120

130

140

150

Peak Inverse Voltage

V_RWM

I_F(AV)

100

150

200

300

400

500

600

Average Rectified Forward

Current(Square Wave

Mounting Method #3 Per

Note1)

1.0 @ T_A= 130C

1.0 @ T_A= 120C

Max. Peak One Cycle Non-

Repetitive Surge Current

8.3 ms, half Sine pulse

I_FSM

Operating Junction

Temperature and Storage

Temperature

T_J,T_stg

-65 to +175

C

Electrical Characteristics:

Characteristics

Symbol

MURC

105

MURC

110

MURC

115

MURC MURC

MURC

160

Unit

120

130

140

150

Max. Forward Voltage Drop

(Note1)

(I_F= 1.0 Amp, T_J= 150 C)

(I_F= 1.0 Amp, T_J= 25 C)

V_F

0.710

0.875

1.05

1.25

Max. Reverse Current (Note1)

(Rated DC Voltage, T_J= 150 C)

(Rated DC Voltage, T_J= 25 C)

I_R

A

2.0

150

5.0

Max Reverse Recovery Time

(I_F= 1.0 Amp, di/dt = 50 A/s)

(I_F= 0.5 Amp, I_R= 1.0 A,

I_REC=0.25A)

t_rr

Max. Junction Capacitance

@V_R= 5V, T_C= 25 C

f_SIG= 1MHz, V_SIG= 50mV (p-p)

Max Forward Recovery Time

(I_F= 1.0 Amp, di/dt = 50 A/s,

I_RECto 1.0V)

C_T

T_fr

1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2%

 (631) 586-7600 FAX (631) 242-9798  http://www.sensitron.com  sales@sensitron.com

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