Datasheet > MURB860CTR

MURB860CTR

更新时间： 2024-11-19 01:09:55

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	758K
描述
8.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

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中文翻译

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数据手册

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MURB860CTR 数据手册

MURB820CTR thru MURB860CTR

MURB820CTR/MURB830CTR/MURB840CTR/MURB860CTR

Pb Free Plating Product

8.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Unit : inch (mm)

D2PAK/TO-263

Latest GPP EPI P/G Technology

Good Soft Recovery Characteristics

Ideally Suited for Automatic Assembly

Low Forward Voltage

Features

High Surge Current Capability

Low Leakage Current

Freewheeling, Snubber, Clamp

Inversion Welder

PFC

Applications

Plating Power Supply

Ultrasonic Cleaner and Welder

Converter & Chopper

Case

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Positive

UPS/LED SMPS/HID

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

MURB820CTR MURB830CTR MURB840CTR MURB860CTR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

8.0

4.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

100

Forward Voltage per diode

@I_F= 4.0A

VFM

IRM

0.98

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

5.0

100

µA

Reverse Recovery Time (Note 1)

t_rr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Lead (Note 3)

R^θJA

R^θJC

1.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on PCB with minimum recommended pad sizes per diode.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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