Datasheet > MURB820CT-1

MURB820CT-1

更新时间： 2024-02-26 17:36:58

品牌	Logo	应用领域
威世 - VISHAY		超快恢复二极管快速恢复二极管
页数	文件大小	规格书
10页	316K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-262AA, TO-262, 3 PIN

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技术参数
数据手册

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MURB820CT-1 技术参数

生命周期：	Active	零件包装代码：	TO-262AA
包装说明：	TO-262, 3 PIN	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.66
其他特性：	FREE WHEELING DIODE, HIGH RELIABILITY	应用：	ULTRA FAST RECOVERY
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	TO-262AA
JESD-30 代码：	R-PSIP-T3	最大非重复峰值正向电流：	100 A
元件数量：	1	相数：	1
端子数量：	3	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	8 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	认证状态：	Not Qualified
最大重复峰值反向电压：	200 V	最大反向恢复时间：	0.035 µs
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

MURB820CT-1 数据手册

Bulletin PD-21085 08/05

MURB820PbF

MUR820-1PbF

Ultrafast Rectifier

Features

t_rr= 25ns

I_F(AV)= 8Amp

V_R= 200V

•

Ultrafast Recovery Time

Low Forward Voltage Drop

Low Leakage Current

175°C Operating Junction Temperature

Lead-Free ("PbF" suffix)

Description/ Applications

International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with

optimized performance of forward voltage drop and ultra fast recovery time.

The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as

free-wheeling diode in low voltage inverters and chopper motor drives.

Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

Absolute Maximum Ratings

Parameters

Max

Units

V_RRM

I_F(AV)

Peak Repetitive Peak Reverse Voltage

Average Rectified Forward Current

Total Device, (Rated V_R), T_C= 150°C

Non Repetitive Peak Surge Current

Peak Repetitive Forward Current

200

I_FSM

I_FM

100

(Rated V_R, Square wave, 20 KHz), T_C= 150°C

T_J, T_STGOperating Junction and Storage Temperatures

-65 to 175

°C

Case Styles

MURB820-1PbF

MURB820PbF

Base

Cathode

N/C

Anode

N/C

D²PAK

TO-262

Document Number: 94081

www.vishay.com

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