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MURB820-1TRRPBF PDF预览

MURB820-1TRRPBF

更新时间： 2024-01-10 21:57:35
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
7页 122K
描述
Ultrafast Rectifier, 8 A FRED PtTM

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中文翻译

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MURB820-1TRRPBF 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.49
Is Samacsys：N配置：SINGLE
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.895 V
最大非重复峰值正向电流：100 A元件数量：1
最高工作温度：175 °C最大输出电流：8 A
最大重复峰值反向电压：200 V最大反向恢复时间：0.035 µs
子类别：Rectifier Diodes表面贴装：NO
Base Number Matches：1

MURB820-1TRRPBF 数据手册

 浏览型号MURB820-1TRRPBF的Datasheet PDF文件第2页浏览型号MURB820-1TRRPBF的Datasheet PDF文件第3页浏览型号MURB820-1TRRPBF的Datasheet PDF文件第4页浏览型号MURB820-1TRRPBF的Datasheet PDF文件第5页浏览型号MURB820-1TRRPBF的Datasheet PDF文件第6页浏览型号MURB820-1TRRPBF的Datasheet PDF文件第7页 
MURB820PbF/MURB820-1PbF  
Vishay High Power Products  
Ultrafast Rectifier,  
8 A FRED PtTM  
FEATURES  
MURB820-1PbF  
• Ultrafast recovery time  
MURB820PbF  
Pb-free  
• Low forward voltage drop  
Available  
• Low leakage current  
RoHS*  
COMPLIANT  
• 175 °C operating junction temperature  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for AEC Q101 level  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
MUR.. series are the state of the art ultrafast recovery  
rectifiers specifically designed with optimized performance of  
forward voltage drop and ultrafast recovery time.  
The planar structure and the platinum doped life time control,  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
3
1
3
1
N/C  
Anode  
N/C  
Anode  
D2PAK  
TO-262  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, dc-to-dc converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
PRODUCT SUMMARY  
trr  
IF(AV)  
VR  
25 ns  
8 A  
200 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
200  
V
Total device, rated VR, TC = 150 °C  
Rated VR, square wave, 20 kHz, TC = 150 °C  
8
100  
IFSM  
A
IFM  
16  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 8 A  
200  
-
-
V
-
-
-
-
-
-
-
-
0.975  
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
0.895  
VR = VR rated  
-
5
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
250  
Junction capacitance  
Series inductance  
CT  
LS  
25  
8.0  
-
-
pF  
nH  
Measured lead to lead 5 mm from package body  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94081  
Revision: 05-Sep-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
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