Datasheet > MURB3060CT

MURB3060CT

更新时间： 2024-11-18 14:52:51

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MURB3060CT 数据手册

MURB3020CT – MURB3060CT

30A SURFACE MOUNT GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Ideally Suited for Automatic Assembly

Super-Fast Recovery Time

High Voltage Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in High Voltage, High Frequency

Inverters, Free Wheeling, and Switching

Power Supplies

PIN 1

D²PAK/TO-263

Mechanical Data



Dim

Min

9.80

9.60

4.40

8.50

—

Max

10.40

10.60

4.80

9.10

2.80

1.40

0.99

1.40

0.70

2.75

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208



Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

Case, PIN 2

1.00

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MURB

3020CT

MURB

3030CT

MURB

3040CT

MURB

3060CT

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 110°C

Total Device

Per Diode

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

200

Forward Voltage per diode

@I_F= 15A

VFM

IRM

1.05

1.25

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

500

µA

Reverse Recovery Time (Note 1)

trr

Typical Junction Capacitance (Note 2)

175

145

Thermal Resistance Junction to Ambient per diode

Thermal Resistance Junction to Case per diode

RθJA

RθJC

2.4

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: March, 2014

www.wontop.com

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