Datasheet > MUR1100

MUR1100

更新时间： 2023-12-06 20:01:16

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	494K
描述
Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)

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中文翻译

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数据手册

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MUR1100 数据手册

MUR170 - MUR1100

HIGH EFFICIENCY RECTIFIER DIODES

VOLTAGE RANGE: 700 - 1000V

CURRENT: 1.0 A

Features

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High crrent capability

Easily cleaned with Freon,Alcohol, lsopropand

and similar solvents

Mechanical Data

Case: D O - 4 1 Molded Plastic

DO-41

Min

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

Dim

Max

25.40

4.06

5.21

0.864

2.72

0.71

2.00

Marking: Type Number

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Unit

Symbol MUR170

MUR180

MUR190

MUR1100

Maximum recurrent peak reverse voltage

Maximum RMS voltage

700

800

560

800

V_RRM

900

630

900

1000

700

490

V_RMS

Maximum DC blocking voltage

700

V_DC

1000

Maximum average forw ard rectified current

9.5mm lead length, @T_A=75

1.0

I_F(AV)

Peak forw ard surge current

10ms single half-sine-w ave

30.0

I_FSM

superimposed on rated load

@T_J=125

Maximum instantaneous forw ard voltage

@ 1.0A

1.7

V_F

I_R

Maximum reverse current

@T_A=25

10.0

at rated DC blocking voltage @T_A=100

100.0

Maximum reverse recovery time

Typical junction capacitance

Typical thermal resistance

(Note1)

trr

(Note2)

(Note3)

C_J

R_θ

Operating junction temperature range

- 55 ----- + 150

T_J

Storage temperature range

- 55 ----- + 150

T_STG

NOTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MH and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance from junction to ambient.

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