MUN5215DW1T1

更新时间： 2024-02-08 11:11:16

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
20页	155K
描述
Dual Bias Resistor Transistors

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中文翻译

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技术参数
数据手册
替代型号

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MUN5215DW1T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.85	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	160	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.15 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN5215DW1T1 数据手册

MUN5211DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5211DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a

premium.

(3)

(2)

(1)

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

SOT−363

CASE 419B

STYLE 1

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

MARKING DIAGRAM

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

XX= Specific Device Code

Total Device Dissipation

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

= Date Code

= (See Page 2)

T = 25°C

Derate above 25°C

mW/°C

°C/W

Thermal Resistance −

Junction-to-Ambient

670 (Note 1.)

490 (Note 2.)

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Preferred devices are recommended choices for future use

and best overall value.

T = 25°C

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance −

Junction-to-Ambient

493 (Note 1.)

325 (Note 2.)

Thermal Resistance −

Junction-to-Lead

188 (Note 1.)

208 (Note 2.)

Junction and Storage Temperature T , T

−55 to +150

stg

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

December, 2003 − Rev. 5

MUN5211DW1T1/D

12 3 4 5 6 7...20

中文翻译

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MUN5215DW1T1 替代型号

型号	品牌	替代类型	描述	数据表
MUN5215DW1T1G	ONSEMI	类似代替	Dual Bias Resistor Transistors
MUN5215T1	ONSEMI	功能相似	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215DW1T1	MOTOROLA	功能相似	Dual Bias Resistor Trasnsistors

与MUN5215DW1T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5215DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5215DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MUN5215DW1T2	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5215DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 41
MUN5215DW-G	WEITRON	获取价格	Transistor
MUN5215-G	WEITRON	获取价格	Transistor
MUN5215T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T1	ROCHESTER	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN
MUN5215T1G	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS

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