MUN5215DW1T1G

更新时间： 2024-09-24 04:38:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
21页	140K
描述
Dual Bias Resistor Transistors

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中文翻译

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数据手册
替代型号

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MUN5215DW1T1G 数据手册

MUN5211DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5211DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a

premium.

http://onsemi.com

(3)

(2)

(1)

Features

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Pb−Free Packages are Available

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

SOT−363

CASE 419B

STYLE 1

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

CBO

CEO

Vdc

MARKING DIAGRAM

100

mAdc

THERMAL CHARACTERISTICS

xx M G

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

187 (Note 1)

256 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

T = 25°C

Derate above 25°C

mW/°C

°C/W

= Device Code

= Date Code*

= Pb−Free Package

Thermal Resistance,

Junction-to-Ambient

670 (Note 1)

490 (Note 2)

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

250 (Note 1)

385 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

T = 25°C

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance,

Junction-to-Ambient

493 (Note 1)

325 (Note 2)

Preferred devices are recommended choices for future use

and best overall value.

Thermal Resistance,

Junction-to-Lead

188 (Note 1)

208 (Note 2)

Junction and Storage Temperature

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 7

MUN5211DW1T1/D

12 3 4 5 6 7...21

中文翻译

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MUN5215DW1T1G 替代型号

型号	品牌	替代类型	描述	数据表
MUN5215DW1T1	ONSEMI	类似代替	Dual Bias Resistor Transistors
MUN5215T1	ONSEMI	功能相似	NPN SILICON BIAS RESISTOR TRANSISTORS
PUMH10	NXP	功能相似	NPN/NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

与MUN5215DW1T1G相关器件

型号	品牌	获取价格	描述	数据表
MUN5215DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MUN5215DW1T2	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5215DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 41
MUN5215DW-G	WEITRON	获取价格	Transistor
MUN5215-G	WEITRON	获取价格	Transistor
MUN5215T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T1	ROCHESTER	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN
MUN5215T1G	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T3	MOTOROLA	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN

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