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MUN5216

更新时间： 2024-02-18 03:49:30
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
8页 201K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5216 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.6
Is Samacsys：NBase Number Matches：1

MUN5216 数据手册

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LESHAN RADIO COMPANY, LTD.  
Dual Bias ResistorTransistors  
NPN Silicon Surface Mount Transistors  
MUN5211DW1T1  
Series  
with Monolithic Bias Resistor Network  
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base–emitter resistor. These  
digital transistors are designed to replace a single device and its external resistor bias network.  
The BRT eliminates these individual components by integrating them into a single device. In  
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which  
is ideal for low power surface mount applications where board space is at a premium.  
• Simplifies Circuit Design  
6
5
4
1
2
3
• Reduces Board Space  
SOT 363  
CASE 419B STYLE1  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
6
5
4
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )  
R1  
R2  
Q2  
Rating  
Symbol Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V CBO  
V CEO  
I C  
50  
50  
R2  
Q1  
Vdc  
R1  
100  
mAdc  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
(One Junction Heated)  
Total Device Dissipation  
T A = 25°C  
Symbol  
Max  
Unit  
6
5
4
P D  
187 (Note 1.)  
256 (Note 2.)  
mW  
7X  
1.5 (Note 1.)  
2.0 (Note 2.)  
670 (Note 1.)  
490 (Note 2.)  
mW/°C  
°C/W  
Derate above 25°C  
1
2
3
Thermal Resistance –  
Junction-to-Ambient  
R θJA  
7X = Device Marking  
= (See Page 2)  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING  
INFORMATION  
See specific marking information in  
the device marking table on page 2 of  
this data sheet.  
Total Device Dissipation  
T A = 25°C  
P D  
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
R θJA  
R θJL  
493 (Note 1.)  
325 (Note 2.)  
188 (Note 1.)  
208 (Note 2.)  
°C/W  
°C/W  
Junction and Storage  
Temperature  
T J , T stg  
–55 to +150  
°C  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN5211dw–1/8  
12345678

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MUN5216DW1T2 ONSEMI

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
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