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MUN5216DW1T2 PDF预览

MUN5216DW1T2

更新时间： 2024-02-11 19:10:16
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
6页 106K
描述
100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN

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中文翻译

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MUN5216DW1T2 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.34最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：160JESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN功耗环境最大值：0.15 W
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管元件材料：SILICONVCEsat-Max：0.25 V

MUN5216DW1T2 数据手册

 浏览型号MUN5216DW1T2的Datasheet PDF文件第2页浏览型号MUN5216DW1T2的Datasheet PDF文件第3页浏览型号MUN5216DW1T2的Datasheet PDF文件第4页浏览型号MUN5216DW1T2的Datasheet PDF文件第5页浏览型号MUN5216DW1T2的Datasheet PDF文件第6页 
MUN5216DW1,  
NSBC143TDXV6  
Dual NPN Bias Resistor  
Transistors  
R1 = 4.7 kW, R2 = 8 kW  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
NPN Transistors with Monolithic Bias  
Resistor Network  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
(3)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
MARKING DIAGRAMS  
• Reduces Component Count  
6
SOT−363  
CASE 419B  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
7F M G  
G
Compliant  
1
1
MAXIMUM RATINGS  
(T = 25°C, common for Q1 and Q2, unless otherwise noted)  
A
SOT−563  
CASE 463A  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
7F M G  
V
CBO  
G
V
CEO  
50  
Vdc  
I
C
100  
30  
mAdc  
Vdc  
7F  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
6
Vdc  
(Note: Microdot may be in either location)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5216DW1T1G,  
SMUN5216DW1T1G  
SOT−363  
3,000 / Tape & Reel  
NSBC143TDXV6T1G  
NSBC143TDXV6T5G  
SOT−563  
SOT−563  
4,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTC143TD/D  
123456

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