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MUN5230DW1T1 PDF预览

MUN5230DW1T1

更新时间： 2024-11-15 22:07:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
20页 155K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5230DW1T1 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：SC-88包装说明：CASE 419B-02, SC-88, 6 PIN
针数：6Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.33
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：3
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin/Lead (Sn80Pb20)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MUN5230DW1T1 数据手册

 浏览型号MUN5230DW1T1的Datasheet PDF文件第2页浏览型号MUN5230DW1T1的Datasheet PDF文件第3页浏览型号MUN5230DW1T1的Datasheet PDF文件第4页浏览型号MUN5230DW1T1的Datasheet PDF文件第5页浏览型号MUN5230DW1T1的Datasheet PDF文件第6页浏览型号MUN5230DW1T1的Datasheet PDF文件第7页 
MUN5211DW1T1 Series  
Preferred Devices  
Dual Bias Resistor  
Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the MUN5211DW1T1 series,  
two BRT devices are housed in the SOT−363 package which is ideal  
for low power surface mount applications where board space is at a  
premium.  
(3)  
(2)  
R
(1)  
R
1
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
1
SOT−363  
CASE 419B  
STYLE 1  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
50  
50  
CBO  
CEO  
MARKING DIAGRAM  
V
Vdc  
6
I
C
100  
mAdc  
d
XX  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
1
Symbol  
Max  
Unit  
XX= Specific Device Code  
Total Device Dissipation  
P
187 (Note 1.)  
256 (Note 2.)  
1.5 (Note 1.)  
2.0 (Note 2.)  
mW  
D
d
= Date Code  
= (See Page 2)  
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance −  
Junction-to-Ambient  
R
670 (Note 1.)  
490 (Note 2.)  
θ
JA  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
D
Preferred devices are recommended choices for future use  
and best overall value.  
T = 25°C  
A
Derate above 25°C  
mW/°C  
°C/W  
°C/W  
°C  
Thermal Resistance −  
Junction-to-Ambient  
R
493 (Note 1.)  
325 (Note 2.)  
θ
JA  
JL  
Thermal Resistance −  
Junction-to-Lead  
R
188 (Note 1.)  
208 (Note 2.)  
θ
Junction and Storage Temperature T , T  
−55 to +150  
J
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
December, 2003 − Rev. 5  
MUN5211DW1T1/D  
 
1234567...20

中文翻译

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MUN5230DW1T1 替代型号

型号 品牌 替代类型 描述 数据表
MUN5230DW1T1G ONSEMI

类似代替

 Dual Bias Resistor Transistors
MUN5230DW1T1 MOTOROLA

功能相似

 Dual Bias Resistor Trasnsistors

与MUN5230DW1T1相关器件

型号 品牌 获取价格 描述 数据表
MUN5230DW1T1G ONSEMI

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 		Dual Bias Resistor Transistors
MUN5230DW1T2 MOTOROLA

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN5230DW1T3 MOTOROLA

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5230DW-G WEITRON

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 		Transistor
MUN5230-G WEITRON

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 		Transistor
MUN5230T1 ONSEMI

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 		NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5230T1 MOTOROLA

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 		NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5230T1G ONSEMI

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 		Bias Resistor Transistor
MUN5230T3 ONSEMI

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 		100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN
MUN5230T3 MOTOROLA

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 		100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN

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