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MUN5230T3 PDF预览

MUN5230T3

更新时间： 2024-01-12 15:50:32
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关光电二极管晶体管
页数 文件大小 规格书
12页 172K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN

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MUN5230T3 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.49其他特性：BUILT IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：3
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MUN5230T3 数据手册

 浏览型号MUN5230T3的Datasheet PDF文件第2页浏览型号MUN5230T3的Datasheet PDF文件第3页浏览型号MUN5230T3的Datasheet PDF文件第4页浏览型号MUN5230T3的Datasheet PDF文件第5页浏览型号MUN5230T3的Datasheet PDF文件第6页浏览型号MUN5230T3的Datasheet PDF文件第7页 
Preferred Devices  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC–70/SOT–323 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR  
TRANSISTORS  
• Simplifies Circuit Design  
• Reduces Board Space  
PIN3  
COLLECTOR  
(OUTPUT)  
• Reduces Component Count  
R1  
• The SC–70/SOT–323 package can be soldered using  
wave or reflow. The modified gull–winged leads absorb  
thermal stress during soldering eliminating the possibility  
of damage to the die.  
PIN1  
R2  
BASE  
(INPUT)  
PIN2  
EMITTER  
(GROUND)  
• Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
Replace “T1” with “T3” in the Device Number to order  
the 13 inch/10,000 unit reel.  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
1
2
V
CBO  
V
CEO  
50  
Vdc  
CASE 419  
SC–70/SOT–323  
STYLE 3  
I
C
100  
mAdc  
Total Power Dissipation  
P
D
(1.)  
@ T = 25°C  
150  
1.2  
mW  
mW/°C  
A
Derate above 25°C  
DEVICE MARKING AND RESISTOR VALUES  
Preferred devices are recommended choices for future use  
and best overall value.  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
3000/Tape & Reel  
MUN5211T1  
MUN5212T1  
MUN5213T1  
MUN5214T1  
MUN5215T1  
MUN5216T1  
MUN5230T1  
MUN5231T1  
MUN5232T1  
MUN5233T1  
MUN5234T1  
MUN5235T1  
8A  
8B  
8C  
8D  
8E  
8F  
8G  
8H  
8J  
10  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
10  
22  
47  
47  
∞
(2.)  
(2.)  
(2.)  
(2.)  
(2.)  
(2.)  
(2.)  
(2.)  
∞
1.0  
2.2  
4.7  
47  
47  
47  
8K  
8L  
8M  
2.2  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 3  
MUN5211T1/D  
1234567...12

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 		100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

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