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MUN5232DW1T1

更新时间： 2024-11-15 22:11:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
10页 183K
描述
Dual Bias Resistor Trasnsistors

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中文翻译

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MUN5232DW1T1 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：unknown风险等级：5.35
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：15
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN功耗环境最大值：0.15 W
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL晶体管元件材料：SILICON
VCEsat-Max：0.25 VBase Number Matches：1

MUN5232DW1T1 数据手册

 浏览型号MUN5232DW1T1的Datasheet PDF文件第2页浏览型号MUN5232DW1T1的Datasheet PDF文件第3页浏览型号MUN5232DW1T1的Datasheet PDF文件第4页浏览型号MUN5232DW1T1的Datasheet PDF文件第5页浏览型号MUN5232DW1T1的Datasheet PDF文件第6页浏览型号MUN5232DW1T1的Datasheet PDF文件第7页 
Order this document  
by MUN5211DW1T1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon Surface Mount Transistors with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
The BRT (Bias Resistor Transistor) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base resistor and a  
base–emitter resistor. These digital transistors are designed to replace a single  
device and its external resistor bias network. The BRT eliminates these  
individual components by integrating them into a single device. In the  
MUN5211DW1T1 series, two BRT devices are housed in the SOT–363  
package which is ideal for low power surface mount applications where board  
space is at a premium.  
6
5
4
1
2
3
CASE 419B–01, STYLE 1  
SOT–363  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
(3)  
(2)  
R
(1)  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
Rating  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
50  
50  
Vdc  
Vdc  
CBO  
CEO  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
833  
°C/W  
°C  
θJA  
T , T  
–65 to +150  
*150  
J
stg  
(1)  
Total Package Dissipation @ T = 25°C  
P
mW  
A
D
DEVICE MARKING AND RESISTOR VALUES: MUN5211DW1T1 SERIES  
Device  
Marking  
R1 (K)  
R2 (K)  
MUN5211DW1T1  
MUN5212DW1T1  
MUN5213DW1T1  
MUN5214DW1T1  
MUN5215DW1T1  
7A  
7B  
7C  
7D  
7E  
7F  
7G  
7H  
7J  
10  
22  
47  
10  
10  
10  
22  
47  
47  
∞
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
MUN5216DW1T1  
MUN5230DW1T1  
MUN5231DW1T1  
MUN5232DW1T1  
MUN5233DW1T1  
MUN5234DW1T1  
MUN5235DW1T1  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
∞
1.0  
2.2  
4.7  
47  
47  
47  
7K  
7L  
7M  
2.2  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New resistor combinations. Updated curves to follow in subsequent data sheets.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  
1234567...10

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