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MTP36N06VG PDF预览

MTP36N06VG

更新时间: 2024-01-17 02:41:27
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 202K
描述
32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, CASE 221A-09, 3 PIN

MTP36N06VG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):205 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):32 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):112 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MTP36N06VG 数据手册

 浏览型号MTP36N06VG的Datasheet PDF文件第2页浏览型号MTP36N06VG的Datasheet PDF文件第3页浏览型号MTP36N06VG的Datasheet PDF文件第4页浏览型号MTP36N06VG的Datasheet PDF文件第5页浏览型号MTP36N06VG的Datasheet PDF文件第6页浏览型号MTP36N06VG的Datasheet PDF文件第7页 
MTP36N06V  
Preferred Device  
Power MOSFET  
32 Amps, 60 Volts  
NChannel TO220  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and power  
motor controls, these devices are particularly well suited for bridge  
circuits where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected voltage  
transients.  
http://onsemi.com  
32 AMPERES  
60 VOLTS  
R
DS(on) = 40 mΩ  
Avalanche Energy Specified  
I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
NChannel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
DraintoSource Voltage  
V
DSS  
DGR  
G
DraintoGate Voltage (R = 1.0 MΩ)  
V
60  
GS  
GatetoSource Voltage  
Continuous  
S
V
± 20  
± 25  
Vdc  
Vpk  
GS  
Nonrepetitive (t 10 ms)  
V
GSM  
p
Drain Current Continuous @ 25 °C  
Drain Current Continuous @ 100 °C  
I
32  
22.6  
112  
Adc  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
D
I
D
Drain Current Single Pulse (t 10 μs)  
I
Apk  
p
DM  
4
4
Drain  
Total Power Dissipation @ 25 °C  
Derate above 25 °C  
P
90  
0.6  
Watts  
W/°C  
D
Operating and Storage Temperature  
Range  
T , T  
55 to  
175  
°C  
J
stg  
TO220AB  
CASE 221A  
STYLE 5  
Single Pulse DraintoSource Avalanche  
E
205  
mJ  
AS  
Energy Starting T = 25°C  
J
MTP30N06V  
LLYWW  
(V = 25 Vdc, V = 10 Vdc, Peak  
DD  
GS  
I = 32 Apk, L = 0.1 mH, R = 25 Ω)  
L
G
1
2
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
R
R
1.67  
62.5  
°C/W  
°C  
θ
JC  
JA  
3
1
Gate  
3
θ
Source  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from Case for 10  
seconds  
T
260  
L
2
Drain  
MTP30N06V  
LL  
Y
= Device Code  
= Location Code  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
MTP36N06V  
Package  
Shipping  
50 Units/Rail  
TO220AB  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 Rev. 4  
MTP36N06V/D  

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