MTP2955AJ

更新时间： 2024-01-28 12:09:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	120K
描述
12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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技术参数
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MTP2955AJ 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.74	外壳连接：	DRAIN
配置：	SINGLE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	12 A	最大漏源导通电阻：	0.3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	P-CHANNEL
功耗环境最大值：	75 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

MTP2955AJ 数据手册

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by MTP2955V/D

SEMICONDUCTOR TECHNICAL DATA

P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

TMOS V is a new technology designed to achieve an on–resis-

tance area product about one–half that of standard MOSFETs. This

new technology more than doubles the present cell density of our

50 and 60 volt TMOS devices. Just as with our TMOS E–FET

designs, TMOS V is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and

power motor controls, these devices are particularly well suited for

bridge circuits where diode speed and commutating safe operating

areas are critical and offer additional safety margin against

unexpected voltage transients.

12 AMPERES

60 VOLTS

= 0.230 OHM

DS(on)

New Features of TMOS V

•

On–resistance Area Product about One–half that of Standard

MOSFETs with New Low Voltage, Low R Technology

DS(on)

Faster Switching than E–FET Predecessors

•

CASE 221A–09, Style 5

TO–220AB

Features Common to TMOS V and TMOS E–FETS

•

Avalanche Energy Specified

and V Specified at Elevated Temperature

Static Parameters are the Same for both TMOS V and TMOS E–FET

DSS

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Gate–to–Source Voltage — Continuous

Gate–to–Source Voltage — Non–Repetitive (t ≤ 10 ms)

± 15

± 25

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

8.0

Adc

Apk

Total Power Dissipation

Derate above 25°C

0.40

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 175

216

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V

= 10 Vdc, Peak I = 12 Apk, L = 3.0 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.5

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

12 3 4 5 6 7 8

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与MTP2955AJ相关器件

型号	品牌	获取价格	描述	数据表
MTP2955C	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal
MTP2955D	MOTOROLA	获取价格	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM
MTP2955D1	MOTOROLA	获取价格	12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2955E	MOTOROLA	获取价格	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
MTP2955L	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal
MTP2955N	MOTOROLA	获取价格	暂无描述
MTP2955S	MOTOROLA	获取价格	12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2955T	MOTOROLA	获取价格	12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2955U2	MOTOROLA	获取价格	12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2955UA	MOTOROLA	获取价格	12A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

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