Datasheet > MTC3588BDFA6

MTC3588BDFA6

更新时间： 2024-11-07 01:21:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
13页	527K
描述
N- And P-Channel Enhancement Mode MOSFET

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数据手册

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MTC3588BDFA6 数据手册

Spec. No. : C102DFA6

Issued Date : 2015.12.03

Revised Date :

CYStech Electronics Corp.

Page No. : 1/13

N- And P-Channel Enhancement Mode MOSFET

N-CH

14V

6A(VGS=4.5V)

16.6mΩ(VGS=4.5V)

P-CH

-14V

-4A(VGS=-4.5 V)

43mΩ(VGS=-4.5V)

MTC3588BDFA6

BVDSS

23.7mΩ(VGS=2.5V) 63.6mΩ(VGS=-2.5V)

38.5mΩ(VGS=1.8V) 86.5mΩ(VGS=-1.8V)

66.3mΩ(VGS=1.5V) 153.3mΩ(VGS=-1.5V)

RDSON(TYP.)

Description

The MTC3588BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single

DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.

Features

• Simple drive requirement

• Fast switching speed

• Low gate charge

• Pb-free lead plating and halogen-free package

• Low on-resistance

Equivalent Circuit

Outline

DFN2×2-6L

MTC3588BDFA6

G：Gate S：Source D：Drain

Ordering Information

Device

Package

Shipping

3000 pcs / Tape & Reel

DFN2×2-6L

(Pb-free lead plating and halogen-free package)

MTC3588BDFA6-0-T1-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

MTC3588BDFA6

CYStek Product Specification

12 3 4 5 6 7...13

中文翻译

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