64GB (x80, ECC, DR) 288-Pin DDR5 RDIMM
Features
DDR5 SDRAM RDIMM Addendum
MTC40F2046S1RC – 64GB
16Gb Die Revision A
Figure 1: 288-Pin DDR5 RDIMM (R/C-A0)
Features
Information provided here is in addition to or super-
sedes information provided in the Micron DDR5
RDIMM Core data sheet.
U1
U2
U3
U4
U5
U6
U7
U8
U9
U10
U23
U11
U13 U14 U15 U16
U17
U18 U19 U20 U21
• DDR5 functionality and operations supported as
U22
U12
defined in the component data sheet
Sensitive parts:
Primary side
• Features and specifications defined in the Micron
U29
DDR5 RDIMM core data sheet
U24 U25 U26 U27 U28
U30
U31 U32 U33 U34 U35
• 288-pin, DDR5 registered dual in-line memory
U36
U37 U38 U39 U40
U41 U42 U43 U44
U45
module (DDR5 RDIMM)
• Fast data transfer rate: PC5-4800
• 64GB (8Gig x 80)
Secondary side
Options
Marking
• Dual-rank
• Operating temperature
– Commercial (0°C ≤ TOPER ≤ 95°C)
• Frequency/CAS latency
• 32 internal banks; 8 groups of 4 banks each
C
48B
– 0.416ns @ CL = 40 (DDR5-4800)
Table 1: Addressing
Parameter
64GB
Row address1
64K (R0-R15)
Column address1
2K (C0-C10)
8 (BG0-BG2)
4 (BA0-BA1)
Device bank group address1
Device bank address per bank group1
Device configuration
16Gb (4Gb x 4), 32 banks
2 (CS0_n, CS1_n)
Module rank address
Notes: 1. These parameters represent the logical address state of the CA bus for different commands. Refer to the command
truth table in the component data sheet.
Table 2: Part Numbers and Timing Parameters – 64GB Modules
Base device: MT60B4G4,1 16Gb DDR5 SDRAM Die Revision A
Part Number
Module
Density
Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-nRCD-nRP)
MTC40F2046S1RC48BA1
64GB
8Gb x 80 (EC8)
38.4 GB/s
0.416ns/4800 MT/s
40-39-39
Notes: 1. The data sheet for the base device can be found on micron.com.
CCM005-802248454-10
mtc40f2046s1rc_drx4_rdimm.pdf - Rev. D 08/2021
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
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Products and specifications discussed herein are subject to change by Micron without notice.