Datasheet > MTC3588N6-0-T1-G

MTC3588N6-0-T1-G

更新时间： 2022-02-26 14:01:20

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
12页	856K
描述
N- And P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTC3588N6-0-T1-G 数据手册

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date : 2016.10.11

Page No. : 1/12

CYStech Electronics Corp.

N- And P-Channel Enhancement Mode Power MOSFET

N-CH

P-CH

MTC3588N6

BVDSS

ID @ TA=25 °C

14V

5.4A(VGS=4.5V)

-14V

-3.6A(VGS=-4.5 V)

17.6mΩ(VGS=4.5V) 45.1mΩ(VGS=-4.5V)

24.7mΩ(VGS=2.5V) 65.6mΩ(VGS=-2.5V)

RDSON(TYP.)

Features

• Simple drive requirement

• Low gate charge

• Low on-resistance

• Fast switching speed

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTC3588N6

SOT-26

G：Gate S：Source D：Drain

Ordering Information

Device

Package

SOT-26

Shipping

MTC3588N6-0-T1-G

3000 pcs / Tape & Reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

MTC3588N6

CYStek Product Specification

12 3 4 5 6 7...12

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