256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT8HTF3264HDY – 256MB
MT8HTF6464HDY – 512MB
MT8HTF12864HDY – 1GB
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Features
Module height: 30mm (1.18in)
200-pin, small-outline dual in-line memory module
(SODIMM)
•
•
•
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB
(128 Meg x 64)
VDD = 1.8V
•
•
•
•
•
•
VDDSPD = 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Options
Marking
Operating temperature
– Commercial (0°C ≤ TA ≤ +70°C)
– Industrial (–40°C ≤ TA ≤ +85°C)1
Package
•
Multiple internal device banks for concurrent opera-
tion
D
T
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
•
•
•
•
•
•
•
•
•
•
•
•
200-pin DIMM (lead-free)
Frequency/CL2
Y
–
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-553)3
5.0ns @ CL = 3 (DDR2-400)3
-80E
-800
-667
-53E
-40E
–
–
–
–
–
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
1. Contact Micron for industrial temperature
module offerings.
Notes:
Dual rank
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Data Rate (MT/s)
Speed
Grade
Industry
Nomenclature
tRCD
(ns)
tRP
(ns)
tRC
(ns)
CL = 6
CL = 5
800
667
667
–
CL = 4
533
CL = 3
400
-80E
-800
-667
-53E
-40E
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
800
800
–
12.5
15
12.5
15
55
55
55
55
55
533
400
553
400
15
15
553
400
15
15
–
400
400
15
15
–
–
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
© 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.