Datasheet > MT58L128V18F

MT58L128V18F

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
镁光 - MICRON		静态存储器
页数	文件大小	规格书
24页	481K
描述
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM

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数据手册

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MT58L128V18F 数据手册

2Mb: 128K x 18, 64K x 32/36

FLOW-THROUGH SYNCBURST SRAM

FUNCTIONAL BLOCK DIAGRAM

128K x 18

ADDRESS

SA0, SA1, SA

MODE

SA0-SA1

SA1'

SA0'

ADV#

CLK

BINARY

COUNTER AND

LOGIC

CLR

ADSC#

ADSP#

BYTE “b”

WRITE DRIVER

BYTE “b”

WRITE REGISTER

BWb#

DQs

DQPa

DQPb

128K x 9 x 2

MEMORY

ARRAY

OUTPUT

BUFFERS

SENSE

AMPS

BYTE “a”

WRITE DRIVER

BYTE “a”

WRITE REGISTER

BWa#

BWE#

INPUT

REGISTERS

GW#

ENABLE

CE#

CE2

CE2#

OE#

FUNCTIONAL BLOCK DIAGRAM

64K x 32/36

ADDRESS

SA0, SA1, SA

MODE

SA0-SA1

ADV#

CLK

BINARY

COUNTER

AND LOGIC

CLR

SA1'

SA0'

ADSC#

ADSP#

BYTE “d”

WRITE DRIVER

BYTE “d”

WRITE REGISTER

BWd#

64K x 8 x 4

(x32)

BYTE “c”

WRITE DRIVER

BWc#

BYTE “c”

WRITE REGISTER

OUTPUT

BUFFERS

64K x 9 x 4

(x36)

DQs

SENSE

AMPS

DQPa

DQPb

DQPc

DQPd

BYTE “b”

WRITE DRIVER

BYTE “b”

WRITE REGISTER

BWb#

MEMORY

ARRAY

BYTE “a”

WRITE DRIVER

BYTE “a”

WRITE REGISTER

BWa#

BWE#

INPUT

REGISTERS

GW#

ENABLE

CE#

CE2

CE2#

OE#

NOTE: Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for

detailed information.

2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM

MT58L128L18F_2.p65 – Rev. 6/01

Micron Technology, Inc., reserves the right to change products or specifications without notice.

123 4 5 6 7...24

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