5秒后页面跳转
MT58L128L36P1T-7.5IT PDF预览

MT58L128L36P1T-7.5IT

更新时间: 2024-02-03 22:26:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
27页 447K
描述
Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

MT58L128L36P1T-7.5IT 技术参数

生命周期:Transferred零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.53
最长访问时间:4 nsJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:4718592 bit
内存集成电路类型:CACHE SRAM内存宽度:36
功能数量:1端子数量:100
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX36
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

MT58L128L36P1T-7.5IT 数据手册

 浏览型号MT58L128L36P1T-7.5IT的Datasheet PDF文件第21页浏览型号MT58L128L36P1T-7.5IT的Datasheet PDF文件第22页浏览型号MT58L128L36P1T-7.5IT的Datasheet PDF文件第23页浏览型号MT58L128L36P1T-7.5IT的Datasheet PDF文件第24页浏览型号MT58L128L36P1T-7.5IT的Datasheet PDF文件第25页浏览型号MT58L128L36P1T-7.5IT的Datasheet PDF文件第26页 
PRELIMINARY  
4Mb : 256K x 18, 128K x 32/36  
PIPELINED, SCD SYNCBURST SRAM  
119-PINBGA  
22.00 ±0.20  
19.94 ±0.10  
Substrate material:  
BT resin laminate  
0.60 ±0.10  
0.90 ±0.10  
14.00 ±0.10  
11.94 ±0.10  
0.15  
2.40 MAX  
SEATING PLANE  
A1 CORNER  
A1 CORNER  
(dimension applies to a  
noncollapsed solder ball)  
0.75 ±0.15  
Ø
1.27 (TYP)  
7.62  
1.27 (TYP)  
20.32  
MAX  
NOTE: 1. All dimensions in millimeters  
or typical where noted.  
MIN  
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.  
3. Solder ball land pad is 0.6mm.  
8000 S. Fe d e ra l Wa y, P.O. Bo x 6, Bo ise , ID 83707-0006, Te l: 208-368-3900  
E-m a il: p ro d m kt g @m icro n .co m , In t e rn e t : h t t p ://w w w .m icro n .co m , Cu st o m e r Co m m e n t Lin e : 800-932-4992  
Micron is a registered trademark and SyncBurst is a trademark of Micron Technology, Inc.  
Pentium is a registered trademark of Intel Corporation.  
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM  
MT58L256L18P1.p65 – Rev. 3/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000, Micron Technology, Inc.  
26  

与MT58L128L36P1T-7.5IT相关器件

型号 品牌 获取价格 描述 数据表
MT58L128V18F MICRON

获取价格

2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128V18FF-10 CYPRESS

获取价格

Standard SRAM, 128KX18, 10ns, CMOS, PBGA165, FBGA-165
MT58L128V18FF-6.8 CYPRESS

获取价格

Standard SRAM, 128KX18, 6.8ns, CMOS, PBGA165, FBGA-165
MT58L128V18FF-7.5 CYPRESS

获取价格

Standard SRAM, 128KX18, 7.5ns, CMOS, PBGA165, FBGA-165
MT58L128V18FF-8.5 CYPRESS

获取价格

128KX18 STANDARD SRAM, 8.5ns, PBGA165, FBGA-165
MT58L128V18FT-10 MICRON

获取价格

2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128V18FT-10IT CYPRESS

获取价格

Standard SRAM, 128KX18, 10ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L128V18FT-6.8 MICRON

获取价格

2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128V18FT-6.8IT CYPRESS

获取价格

Cache SRAM, 128KX18, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L128V18FT-6.8T CYPRESS

获取价格

Cache SRAM, 128KX18, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100