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MT4LC16M4H9DJ-5 PDF预览

MT4LC16M4H9DJ-5

更新时间: 2024-01-28 19:47:13
品牌 Logo 应用领域
镁光 - MICRON 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
22页 386K
描述
DRAM

MT4LC16M4H9DJ-5 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.32
Is Samacsys:N访问模式:FAST PAGE WITH EDO
最长访问时间:50 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码:R-PDSO-J32长度:20.98 mm
内存密度:67108864 bit内存集成电路类型:EDO DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:32
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
刷新周期:4096座面最大高度:3.68 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:10.21 mm
Base Number Matches:1

MT4LC16M4H9DJ-5 数据手册

 浏览型号MT4LC16M4H9DJ-5的Datasheet PDF文件第2页浏览型号MT4LC16M4H9DJ-5的Datasheet PDF文件第3页浏览型号MT4LC16M4H9DJ-5的Datasheet PDF文件第4页浏览型号MT4LC16M4H9DJ-5的Datasheet PDF文件第5页浏览型号MT4LC16M4H9DJ-5的Datasheet PDF文件第6页浏览型号MT4LC16M4H9DJ-5的Datasheet PDF文件第7页 
16 MEG x 4  
EDO DRAM  
MT4LC16M4G3, MT4LC16M4H9  
DRAM  
For the latest data sheet, please refer to the Micron Web  
site: www.micronsemi.com/mti/msp/html/datasheet.html  
FEATURES  
• Sin gle +3.3V ±0.3V power supply  
• In dustry-stan dard x4 pin out, tim in g, fun ction s,  
an d packages  
• 12 row, 12 colum n addresses (H9) or  
13 row, 11 colum n addresses (G3)  
• High -perform an ce CMOS silicon -gate process  
• All in puts, outputs an d clocks are LVTTL-com pat-  
ible  
• Exten ded Data-Out (EDO) PAGE MODE access  
Option al self refresh (S) for low-power data  
reten tion  
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH  
distributed across 64m s  
PIN ASSIGNMENT (To p Vie w )  
32-Pin SOJ  
32-Pin TSOP  
V
CC  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
Vss  
V
CC  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
Vss  
DQ0  
DQ1  
NC  
NC  
NC  
DQ3  
DQ2  
NC  
NC  
NC  
CAS#  
OE#  
NC/A12**  
A11  
A10  
A9  
DQ0  
DQ1  
NC  
NC  
NC  
DQ3  
DQ2  
NC  
NC  
NC  
CAS#  
OE#  
NC/A12**  
A11  
A10  
A9  
NC  
WE#  
RAS#  
A0  
A1  
A2  
A3  
A4  
A5  
NC  
9
WE#  
RAS#  
A0  
A1  
A2  
A3  
A4  
A5  
10  
11  
12  
13  
14  
15  
16  
9
10  
11  
12  
13  
14  
15  
16  
A8  
A7  
A6  
Vss  
A8  
A7  
A6  
Vss  
OPTIONS  
MARKING  
VCC  
• Refresh Addressin g  
4,096 (4K) rows  
8,192 (8K) rows  
VCC  
H9  
G3  
**NC on H9 version, A12 on G3 version  
• Plastic Packages  
32-pin SOJ (400 m il)  
32-pin TSOP (400 m il)  
DJ  
TG  
16 MEG x 4 EDO DRAM PART NUMBERS  
• Tim in g  
REFRESH  
PART NUMBER  
ADDRESSING  
PACKAGE  
REFRESH  
50n s access  
60n s access  
-5  
-6  
MT4LC16M4H9DJ-x  
MT4LC16M4H9DJ-x S  
MT4LC16M4H9TG-x  
MT4LC16M4H9TG-x S  
MT4LC16M4G3DJ-x  
MT4LC16M4G3DJ-x S  
MT4LC16M4G3TG-x  
MT4LC16M4G3TG-x S  
4K  
4K  
4K  
4K  
8K  
8K  
8K  
8K  
SOJ  
SOJ  
Standard  
Self  
• Refresh Rates  
TSOP  
TSOP  
SOJ  
Standard  
Self  
Stan dard Refresh  
Self Refresh (128m s period)  
Non e  
S*  
Standard  
Self  
NOTE: 1. Th e 16 Meg x 4 EDO DRAM base n um ber  
differen tiates th e offerin gs in on e place—  
MT4LC16M4H9. Th e fifth field distin guish es th e  
address offerin gs: H9 design ates 4K addresses an d  
G3 design ates 8K addresses.  
SOJ  
TSOP  
TSOP  
Standard  
Self  
x = speed  
2. Th e “#” sym bol in dicates sign al is active LOW.  
*Con tact factory for availability  
GENERAL DESCRIPTION  
Th e 16 Meg x 4 DRAM is a h igh -speed CMOS,  
dyn am ic ran dom -access m em ory device con tain in g  
67,108,864 bits an d design ed to operate from 3V to  
3.6V. Th e MT4LC16M4H9 an d MT4LC16M4G3 are  
fun ction ally organ ized as 16,777,216 location s con -  
tain in g 4 bits each . Th e 16,777,216 m em ory location s  
are arran ged in 4,096 rows by 4,096 colum n s on th e H9  
version an d 8,192 rows by 2,048 colum n s on th e G3  
version . Durin g READ or WRITE cycles, each location is  
Part Number Example:  
MT4LC16M4H9DJ-6  
KEY TIMING PARAMETERS  
t
t
t
t
t
t
SPEED  
RC  
RAC  
PC  
AA  
CAC  
CAS  
-5  
-6  
84ns  
50ns  
60ns  
20ns  
25ns  
25ns  
30ns  
13ns  
15ns  
8ns  
104ns  
10ns  
16 Meg x 4 EDO DRAM  
D22_2.p65 – Rev. 5/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000,Micron Technology,Inc.  
1

MT4LC16M4H9DJ-5 替代型号

型号 品牌 替代类型 描述 数据表
K4E640412E-JP50 SAMSUNG

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