Datasheet > MT28F322P3

MT28F322P3

更新时间： 2024-01-17 07:38:29

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
36页	390K
描述
FLASH MEMORY

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中文翻译

获取价格

数据手册

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MT28F322P3 数据手册

‡

PRELIMINARY

2 MEG x 16

ASYNC/PAGE FLASH MEMORY

MT28F322P3

FLASH MEMORY

Low Voltage, Extended Temperature

FEATURES

• Flexible dual-bank architecture

Support for true concurrent operation with zero

latency

BALLASSIGNMENT

48-BallFBGA

Read bank a during program bank b and vice

versa

Read bank a during erase bank b and vice versa

• Basic configuration:

Seventy-one erasable blocks

Bank a (8Mb for data storage)

Bank b (24Mb for program storage)

• V^CC, VCCQ, VPP voltages

A13

A11

VPP

WP#

A19

A14

A15

A16

A10

A12

WE#

RST#

A18

A20

DQ2

DQ3

A17

2.7V (MIN), 3.3V (MAX) VCC

2.2V (MIN), 3.3V (MAX) VCCQ

3.0V (TYP) VPP (in-system PROGRAM/ERASE)

12V ±±5 (ꢀV) V^PPtolerant (factory programming

compatibility)

DQ14

DQ15

DQ7

DQ5

DQ6

DQ13

DQ8

DQ9

DQ10

CE#

DQ0

DQ1

DQ11

DQ12

DQ4

• Random access time: 70ns @ 2.7V VCC

• Page Mode read access

VSS

Eight-word page

Interpage read access: 70ns @ 2.7V

Intrapage read access: 30ns @ 2.7V

• Low power consumption (V^CC= 3.3V)

Asynchronous/interpage READ < 1±mA

Intrapage READ < 7mA

VSS

VCC

OE#

Top View

(Ball Down)

WRITE < 20mA (MAX)

ERASE < 2±mA (MAX)

Standby < 1±µA (TYP), ±0µA (MAX) @ 3.3V

Automatic power save (APS) feature

• Enhanced write and erase suspend options

ERASE-SUSPEND-to-READ within same bank

PROGRAM-SUSPEND-to-READ within same bank

ERASE-SUSPEND-to-PROGRAM within same bank

• Dual 64-bit chip protection registers for security

purposes

NOTE: See page 7 for Ball Description Table.

See page 35 for mechanical drawing.

OPTIONS

• Timing

70ns access

80ns access

• Boot Block Configuration

Top

MARKING

-70

-80

• Cross-compatible command support

Extended command set

Bottom

Common flash interface

• Package

• PROGRAM/ERASE cycle

48-ball FBGA (6 x 8 ball grid)

• Operating Temperature Range

Commercial (0ºC to +70ºC)

Extended (-40ºC to +8±ºC)

100,000 WRITE/ERASE cycles per block

• Fast programming algorithm

V^PP= 12V ±±5

None

Part Number Example:

MT28F322P3FJ-70BET

2 Meg x 16 Async/Page Flash Memory

MT28F322P3FJ_3.p65 – Rev. 3, Pub. 7/02

‡

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE

SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S

PRODUCTIONDATASHEETSPECIFICATIONS.

12 3 4 5 6 7...36

中文翻译

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