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MT28F400B3SG-8B PDF预览

MT28F400B3SG-8B

更新时间： 2024-02-01 09:15:38
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
30页 425K
描述
FLASH MEMORY

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中文翻译

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MT28F400B3SG-8B 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：0.500 INCH, PLASTIC, SOP-44
针数：44Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.88最长访问时间：80 ns
其他特性：TOP BOOT BLOCK备用内存宽度：8
启动块：TOP命令用户界面：YES
数据轮询：NO耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G44JESD-609代码：e0
长度：28.02 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：1,2,1,3
端子数量：44字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX16封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP44,.63
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：PARALLEL峰值回流温度（摄氏度）：235
电源：3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：2.8 mm
部门规模：16K,8K,96K,128K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30切换位：NO
类型：NOR TYPE宽度：12.6 mm
Base Number Matches：1

MT28F400B3SG-8B 数据手册

 浏览型号MT28F400B3SG-8B的Datasheet PDF文件第2页浏览型号MT28F400B3SG-8B的Datasheet PDF文件第3页浏览型号MT28F400B3SG-8B的Datasheet PDF文件第4页浏览型号MT28F400B3SG-8B的Datasheet PDF文件第5页浏览型号MT28F400B3SG-8B的Datasheet PDF文件第6页浏览型号MT28F400B3SG-8B的Datasheet PDF文件第7页 
4Mb  
SMART 3 BOOT BLOCK FLASH MEMORY  
MT28F004B3  
FLASH MEMORY  
MT28F400B3  
3V Only, Dual Supply (Smart 3)  
FEATURES  
• Seven erase blocks:  
40-Pin TSOP Type I 48-Pin TSOP Type I  
16KB/8K-word boot block (protected)  
Two 8KB/4K-word parameter blocks  
Four main memory blocks  
• Smart 3 technology (B3):  
3.3V ±0.3V VCC  
3.3V ±0.3V VPP application programming  
5V ±10% VPP application/production programming1  
• Compatible with 0.3µm Smart 3 device  
• Advanced 0.18µm CMOS floating-gate process  
• Address access time: 80ns  
44-Pin SOP  
• 100,000 ERASE cycles  
• Industry-standard pinouts  
• Inputs and outputs are fully TTL-compatible  
• Automated write and erase algorithm  
• Two-cycle WRITE/ERASE sequence  
• Byte- or word-wide READ and WRITE  
(MT28F400B3, 256K x 16/512K x 8)  
• Byte-wide READ and WRITE only  
(MT28F004B3, 512K x 8)  
• TSOP and SOP packaging options  
GENERAL DESCRIPTION  
OPTIONS  
• Timing  
MARKING  
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)  
are nonvolatile, electrically block-erasable (flash), pro-  
grammable memory devices containing 4,194,304 bits  
organized as 262,144 words (16 bits) or 524,288 bytes (8  
bits). Writing or erasing the device is done with either a  
3.3V or 5V VPP voltage, while all operations are performed  
with a 3.3V VCC. Due to process technology advances,  
5V VPP is optimal for application and production pro-  
gramming. These devices are fabricated with Micron’s  
advanced 0.18µm CMOS floating-gate process.  
The MT28F004B3 and MT28F400B3 are organized  
into seven separately erasable blocks. To ensure that  
critical firmware is protected from accidental erasure or  
overwrite, the devices feature a hardware-protected  
boot block. Writing or erasing the boot block requires  
either applying a super-voltage to the RP# pin or driv-  
ing WP# HIGH in addition to executing the normal write  
or erase sequences. This block may be used to store  
code implemented in low-level system recovery. The  
remaining blocks vary in density and are written and  
erased with no additional security measures.  
80ns access  
-8  
• Configurations  
512K x 8  
MT28F004B3  
MT28F400B3  
256K x 16/512K x 8  
• Boot Block Starting Word Address  
Top (3FFFFh)  
T
B
Bottom (00000h)  
• Operating Temperature Range  
Commercial (0ºC to +70ºC)  
Extended (-40ºC to +85ºC)  
None  
ET  
• Packages  
44-pin SOP (MT28F400B3)  
48-pin TSOP Type I (MT28F400B3)  
40-pin TSOP Type I (MT28F004B3)  
SG  
WG  
VG  
NOTE:  
1. This generation of devices does not support 12V VPP  
compatibility production programming; however, 5V VPP  
application production programming can be used with no  
loss of performance.  
Refer to Micron’s Web site (www.micron.com/flash)  
for the latest data sheet.  
Part Number Example:  
MT28F400B3SG-8T  
4MbSmart3BootBlockFlashMemory  
F45_3.p65 – Rev. 3, Pub. 12/01  
1
©2001,MicronTechnology,Inc.  
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.  
1234567...30

中文翻译

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