Datasheet > MT28F400B5

MT28F400B5

更新时间： 2024-02-27 12:14:12

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
32页	372K
描述
FLASH MEMORY

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中文翻译

获取价格

数据手册

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MT28F400B5 数据手册

4Mb

SMART 5 BOOT BLOCK FLASH MEMORY

MT28F004B5

MT28F400B5

FLASH MEMORY

5V Only, Dual Supply (Smart 5)

0.3µm Process Technology

FEATURES

• Seven erase blocks:

40-Pin TSOP Type I 48-Pin TSOP Type I

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Four main memory blocks

• Smart 5 technology (B5):

5V 1ꢀ0 V^CC

5V 1ꢀ0 VPP application/production

programming

12V 50 VPP compatibility production

programming

44-Pin SOP

• Address access times: 6ꢀns, 8ꢀns

• 1ꢀꢀ,ꢀꢀꢀ ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• Byte- or word-wide READ and WRITE

(MT28F4ꢀꢀB5, 256K x 16/512K x 8)

• Byte-wide READ and WRITE only

(MT28Fꢀꢀ4B5, 512K x 8)

GENERAL DESCRIPTION

The MT28Fꢀꢀ4B5 (x8) and MT28F4ꢀꢀB5 (x16, x8)

are nonvolatile, electrically block-erasable (flash), pro-

grammable, read-only memories containing 4,194,3ꢀ4

bits organized as 262,144 words (16 bits) or 524,288

bytes (8 bits). Writing or erasing the device is done with

a 5V V^PPvoltage, while all operations are performed

with a 5V VCC. Due to process technology advances, 5V

V^PPis optimal for application and production program-

ming. For backward compatibility with SmartVoltage

• TSOP and SOP packaging options

OPTIONS

• Timing

MARKING

6ꢀns access

8ꢀns access

-6

-8

-8 ET

• Configurations

512K x 8

MT28Fꢀꢀ4B5

MT28F4ꢀꢀB5

technology, 12VVPP issupportedforamaximumof1ꢀꢀ

cycles and may be connected for up to 1ꢀꢀ cumulative

hours. These devices are fabricated with Micron’s ad-

vanced CMOS floating-gate process.

256K x 16/512K x 8

• Boot Block Starting Word Address

Top (3FFFFH)

Bottom (ꢀꢀꢀꢀꢀH)

The MT28Fꢀꢀ4B5 and MT28F4ꢀꢀB5 are organized

into seven separately erasable blocks. To ensure that

critical firmware is protected from accidental erasure or

overwrite, the devices feature a hardware-protected

boot block. Writing or erasing the boot block requires

either applying a super-voltage to the RP# pin or driv-

ing WP# HIGH in addition to executing the normal

writeorerasesequences. Thisblockmaybeusedtostore

code implemented in low-level system recovery. The

remaining blocks vary in density and are written and

erased with no additional security measures.

• Operating Temperature Range

Commercial (ꢀ°C to +7ꢀ°C)

Extended (-4ꢀ°C to +85°C)

None

• Packages

Plastic 44-pin SOP (6ꢀꢀ mil)

Plastic 48-pin TSOP Type 1

(12mm x 2ꢀmm)

Plastic 4ꢀ-pin TSOP

(1ꢀmm x 2ꢀmm)

PleaserefertoMicron’sWebsite(www.micron.com/

flash/htmls/datasheets.html)p for the latest data sheet.

PartNumberExample:

MT28F400B5SG-8 T

4Mb Smart 5 Boot Block Flash Memory

F44_B.p65 – Rev. 7/02

Micron Technology, Inc., reserves the right to change products or specifications without notice.

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

12 3 4 5 6 7...32

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