Datasheet > MT28F642D18

MT28F642D18

更新时间： 2024-02-08 01:38:26

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
51页	584K
描述
FLASH MEMORY

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中文翻译

获取价格

数据手册

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MT28F642D18 数据手册

‡

ADVANCE

4 MEG x 16

ASYNC/PAGE/BURST FLASH MEMORY

MT28F642D18

MT28F642D20

FLASH MEMORY

Low Voltage, Extended Temperature

0.18µm Process Technology

FEATURES

• Single device supports asynchronous, page, and

burst operations

PINASSIGNMENT

59-BallFBGA

• Flexible dual-bank architecture

Support for true concurrent operation with zero

latency

Read bank a during program bank b and vice

versa

Read bank a during erase bank b and vice versa

• Basic configuration:

One hundred and thirty-five erasable blocks

Bank a (16Mb for data storage)

Bank b (48Mb for program storage)

• V^CC, VCCQ, VPP voltages

A11

VCC

A18

A12

A13

A15

A20

A21

CLK

ADV#

A16

RST#

WE#

DQ12

DQ2

A17

A19

WP#

DQ1

DQ9

A10

WAIT#

DQ6

A14

DQ15

DQ14

CE#

DQ0

DQ8

DQ4

1.70V (MIN), 1.90V (MAX) V^CC, VCCQ

(MT28F642D18 only)

DQ13

DQ5

DQ10

DQ3

OE#

DQ11

1.80V (MIN), 2.20V (MAX) VCC, and

2.25V (MAX) V^CCQ (MT28F642D20 only)

1.80V (TYP) VPP (in-system PROGRAM/ERASE)

12V 5ꢀ (ꢁV) VPP tolerant (factory programming

compatibility)

DQ7

SSQ

CCQ

VSSQ

VCC

Top View

(Ball Down)

• Random access time: 70ns @ 1.80V V^CC

NOTE: See page 7 for Ball Description Table.

• Burst Mode read access

See page 50 for mechanical drawing.

MAX clock rate: 54 Mꢁz (^tCLK = 18.5ns)

Burst latency: 70ns @ 1.80V VCC and 54 Mꢁz

^tACLK: 15ns @ 1.80V VCC and 54 Mꢁz

• Page Mode read access¹

• Cross-compatible command support

Extended command set

Four-/eight-word page

Common flash interface

Interpage read access: 70ns @ 1.80V

Intrapage read access: 30ns @ 1.80V

• Low power consumption (VCC = 2.20V)

Asynchronous Read < 15mA

• PROGRAM/ERASE cycle

100,000 WRITE/ERASE cycles per block

OPTIONS

• Timing

80ns access

70ns access

• Frequency

40 Mꢁz

54 Mꢁz

• Boot Block Configuration

Top

Bottom

• Package

59-ball FBGA (8 x 7 ball grid)

• Operating Temperature Range

Extended (-40ºC to +85ºC)

MARKING

Interpage Read < 15mA

Intrapage Read < 5mA

Continuous Burst Read < 10mA

WRITE < 55mA (MAX)

ERASE < 45mA (MAX)

-80

-70

Standby < 50µA (MAX)

Automatic power save (APS) feature

Deep power-down < 25µA (MAX)

• Enhanced write and erase suspend options

• Accelerated programming algorithm (APA) in-

system and in-factory

• Dual 64-bit chip protection registers for security

purposes

Part Number Example:

MT28F642D20FN-804TET

NOTE: 1. Data based on MT28F642D20 device.

4Megx16Async/Page/BurstFlashMemory

MT28F642D18_3.p65 – Rev. 3, Pub. 8/02

‡

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE

SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S

PRODUCTIONDATASHEETSPECIFICATIONS.

12 3 4 5 6 7...51

中文翻译

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